參數(shù)資料
型號(hào): 28F016XS
廠(chǎng)商: Intel Corp.
英文描述: 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器)
中文描述: 16兆位同步閃存(1,600位同步閃速存儲(chǔ)器)
文件頁(yè)數(shù): 31/54頁(yè)
文件大小: 830K
代理商: 28F016XS
E
5.5
V
CC
= 5.0V ± 5%, T
A
= 0°C to +70°C
3/5# = Pin Set Low for 5.0V Operations
28F016XS FLASH MEMORY
31
DC Characteristics
(Continued)
Symbol
Parameter
Notes
Min
Typ
Max
Units
Test Conditions
I
CCW
V
CC
Program
Current
1,6
25
35
mA
V
PP
= 12.0V ± 5%
Program in Progress
V
PP
= 5.0V ± 10%
Program in Progress
V
PP
= 12.0V ± 5%
Block Erase in Progress
V
PP
= 5.0V ± 10%
Block Erase in Progress
CE
0
#, CE
1
# = V
IH
Block Erase Suspended
V
PP
V
CC
V
PP
> V
CC
RP# = GND ± 0.2V
25
40
mA
I
CCE
V
CC
Erase
Suspend Current
1,6
18
25
mA
20
30
mA
I
CCES
V
CC
Block Erase
Current
1,2
5
10
mA
I
PPS
I
PPR
I
PPD
V
PP
Standby/Read
Current
V
PP
Deep Power-
Down Current
V
PP
Program
Current
1
± 1
± 10
μA
30
0.2
200
5
μA
μA
1
I
PPW
1,6
7
12
mA
V
PP
= 12.0V ± 5%
Program in Progress
V
PP
= 5.0V ± 10%
Program in Progress
V
PP
= 12.0V ± 5%
Block Erase in Progress
V
PP
= 5.0V ± 10%
Block Erase in Progress
V
PP
= V
PPH1
or
V
PPH2
Block Erase Suspended
17
22
mA
I
PPE
V
PP
Block Erase
Current
1,6
5
10
mA
16
20
mA
I
PPES
V
PP
Erase
Suspend Current
Input Low Voltage
Input High Voltage
1
30
200
μA
V
IL
V
IH
6
6
–0.5
2.0
0.8
V
CC
+0.5
0.45
V
V
V
OL
Output Low
Voltage
6
V
V
CC
= V
CC
Min
I
OL
= 5.8 mA
V
CC
= V
CC
Min
I
OH
= –2.5 mA
V
CC
= V
CC
Min
I
OH
= –100 μA
V
OH
1
Output High
Voltage
6
0.85
V
CC
V
CC
–0.4
V
V
OH
2
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