- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371435 > 28F016XS (Intel Corp.) 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲器) PDF資料下載
參數(shù)資料
| 型號： | 28F016XS |
| 廠商： | Intel Corp. |
| 英文描述： | 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲器) |
| 中文描述： | 16兆位同步閃存（1,600位同步閃速存儲器） |
| 文件頁數(shù)： | 12/54頁 |
| 文件大?。?/td> | 830K |
| 代理商： | 28F016XS |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁當(dāng)前第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁
28F016XS FLASH MEMORY
E
12
2.1
Lead Descriptions
Symbol
Type
Name and Function
A
0
INPUT
BYTE-SELECT ADDRESS:
Selects between high and low byte when device is
in x8 mode. This address is latched in x8 data programs and ignored in x16
mode (i.e., the A
0
input buffer is turned off when BYTE# is high).
A
1
INPUT
BANK-SELECT ADDRESS:
Selects an even or odd bank in a selected block.
A 128-Kbyte block is subdivided into an even and odd bank. A
1
= 0 selects the
even bank and A
1
= 1 selects the odd bank, in both byte-wide mode and word-
wide mode device configurations.
A
2
–A
16
INPUT
WORD-SELECT ADDRESSES:
Select a word within one 128-Kbyte block.
Address A
1
and A
7
–16
select 1 of 2048 rows, and A
2–6
select 16 of 512
columns. These addresses are latched during both data reads and programs.
A
17
–A
20
INPUT
BLOCK-SELECT ADDRESSES:
Select 1 of 16 erase blocks. These
addresses are latched during data programs, erase and lock-block operations.
DQ
0
–DQ
7
INPUT/
OUTPUT
LOW-BYTE DATA BUS:
Inputs data and commands during CUI write cycles.
Outputs array, identifier or status data in the appropriate read mode. Floated
when the chip is de-selected or the outputs are disabled.
DQ
8
–DQ
15
INPUT/
OUTPUT
HIGH-BYTE DATA BUS:
Inputs data during x16 data program operations.
Outputs array or identifier data in the appropriate read mode; not used for
Status Register reads. Outputs floated when the chip is de-selected, the
outputs are disabled (OE# = V
IH
) or BYTE# is driven active.
CE
0
#, CE
1
#
INPUT
CHIP ENABLE INPUTS:
Activate the device’s control logic, input buffers,
decoders and sense amplifiers. With either CE
0
# or CE
1
# high, the device is
de-selected and power consumption reduces to standby levels upon
completion of any current data program or erase operations. Both CE
0
# and
CE
1
# must be low to select the device.
All timing specifications are the same for both signals. Device Selection occurs
with the latter falling edge of CE
0
# or CE
1
#. The first rising edge of CE
0
# or
CE
1
# disables the device.
RP#
INPUT
RESET/POWER-DOWN:
RP# low places the device in a deep power-down
state. All circuits that consume static power, even those circuits enabled in
standby mode, are turned off. When returning from deep power-down, a
recovery time of t
PHCH
is required to allow these circuits to power-up.
When RP# goes low, the current WSM operation is terminated, and the device
is reset. All Status Registers return to ready, clearing all status flags. Exit from
deep power-down places the device in read array mode.
OE#
INPUT
OUTPUT ENABLE:
Drives device data through the output buffers when low.
The outputs float to tri-state off when OE# is high. CEx# overrides OE#, and
OE# overrides WE#.
WE#
INPUT
WRITE ENABLE:
Controls
access to the CUI, Data Register and Address
Latch. WE# is active low, and latches both address and data (command or
array) on its rising edge.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F020 | 5 V Bulk Erase Flash Memory(5V 整體擦寫閃速存儲器) |
| 28F128J3A | 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲器) |
| 28F320J3A | 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲器) |
| 28F640J3A | 3 Volt Intel StrataFlash Memory(3 V 64M位英特爾StrataFlash存儲器) |
| 28F128 | 3 Volt Intel StrataFlash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F0181-1SR-10 | 功能描述:電磁干擾濾波珠子、扼流圈和陣列 115ohms 100MHz 10A Broad Band Frequency RoHS:否 制造商:AVX 阻抗: 最大直流電流:35 mA 最大直流電阻: 容差: 端接類型:SMD/SMT 電壓額定值:25 V 工作溫度范圍:- 25 C to + 85 C 封裝 / 箱體:0603 (1608 metric) |
| 28F020 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F020 2048K (256K X 8) CMOS FLASH MEMORY |
| 28F020-150 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F020G12 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| 28F020N12 | 制造商: 功能描述: 制造商:undefined 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。