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參數(shù)資料
| 型號(hào)： | UPD46128953-X |
| 廠商： | NEC Corp. |
| 英文描述： | 128M-BIT CMOS MOBILE SPECIFIED RAM 4M-WORD BY 32-BIT ADDRESS / DATA MULTIPLEXED EXTENDED TEMPERATURE OPERATION |
| 中文描述： | 128兆位CMOS移動(dòng)指明內(nèi)存分詞由32位地址/數(shù)據(jù)復(fù)用溫度范圍 |
| 文件頁(yè)數(shù)： | 42/60頁(yè) |
| 文件大?。?/td> | 468K |
| 代理商： | UPD46128953-X |
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Preliminary Data Sheet M17506EJ1V1DS
42
μ
PD46128953-X
(2/2)
Parameter
Symbol
-E12X
-E15X
Unit
Note
MIN.
MAX.
MIN.
MAX.
Read Specifications
Burst access time
t
AC
8
8
ns
1, 3
Output data hold
t
OH
2
2
ns
1
CLK to output in high impedance
t
HZ
7
7
ns
2
Write Specifications
Write data valid of CLK
t
WDS
5
5
ns
Write data hold of CLK
t
WDH
1
1
ns
DM setup time to CLK
t
BDS
5
5
ns
DM hold time to CLK
t
BDH
1
1
ns
/WAIT Specifications
/WAIT LOW output time from CLK
t
CEWA
8
8
ns
1
/WAIT HIGH output time from CLK
t
CLWA
8
8
ns
1
/WAIT in high impedance from CLK
t
CWHZ
10
10
ns
2
Others
/OE to output in low impedance
t
OLZ
1
1
ns
2
Output time from /OE HIGH to LOW
t
OAC
9
9
ns
1, 3, 4
during burst read
Notes 1.
Output load: 30 pF
2.
Output load: 5 pF
3.
In case output driver size is ‘Middle’
4.
For t
OAC
, refer to
Figure 5-9.
/OE HIGH to LOW during burst read operation timing.
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