參數(shù)資料
型號(hào)： NT5TU64M16DG-3C
廠商： NANYA TECHNOLOGY CORP
元件分類： DRAM
英文描述： 64M X 16 DDR DRAM, 0.45 ns, PBGA84
封裝： GREEN, BGA-84
文件頁(yè)數(shù)： 26/85頁(yè)
文件大?。?/td> 2622K
代理商： NT5TU64M16DG-3C
NT5TU256M4GE / NT5TU128M8GE / NT5TU64M16GG
1Gb DDR2 SDRAM
32
REV 1.0
06 / 2010
The seamle
ss burst read operations supported by enabling a read command at every clock for BL=4 operation, and every
4 clock for BL=8 operation. This operation allows regardless of same or different banks as long as the banks activated.
Burst Write Command
The Burst Write command is initiated by having CS, CAS and WE low while holding RAS high at the rising edge of the clock.
The address inputs determine the starting column address. Write latency (WL) is defined by a read latency (RL) minus one
and is equal to (AL + CL -1). A data strobe signal (DQS) has to be driven low (preamble) a time tWPRE prior to the WL. The
first data bit of the burst cycle must be applied to the DQ pins at the first rising edge of the DQS following the preamble. The
tDQSS specification must be satisfied for write cycles. The subsequent burst bit data are issued on successive edges of the
DQS until the burst length is completed, which is 4 or 8 bit burst. When the burst has finished, any additional data supplied
to the DQ pins will be ignored. The DQ signal is ignored after the burst write operation is complete. The time from the
completion of the
burst write to bank precharge is named “write recovery time” (WR) .
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the
EMRS “Enable DQS” mode bit; timing advantages of differential mode are realized in system design. The method by which
the DDR2 SDRAM pin timing measured is mode dependent.
Basic Burst Write Timing
DQS,
DQS
t DQSH
tDQSL
tWPRE
WPST
t
Din
t
DS
t DH
Example:
Burst Write Operation: RL = 5 (AL = 2, CL = 3), WL = 4, BL = 4
NOP
Precharge
NOP
WRITE A
Post CAS
T0
T2
T1
T3
T4
T5
T6
T7
T9
WL = RL-1 = 4
BW543
CMD
DQ
NOP
DIN A0 DIN A1 DIN A2 DIN A3
<= tDQSS
tWR
Completion of
the Burst Write
DQS,
DQS
CK, CK
相關(guān)PDF資料
PDF描述
NTA2425E
NTA2425F
NTA2410-10
NTD2410F
NTA2425-10
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