
M44C510
TELEFUNKEN Semiconductors
Rev. A2, 13-Jan-98
46 (57)
3
Electrical Characteristics
3.1
Absolute Maximum Ratings
Voltages are given relative to VSS .
Parameters
Symbol
Value
Unit
Supply voltage
VDD
–0.3 to + 6.5
V
Input voltage (on any pin)
VIN
VSS –0.3
VIN VDD +0.3
V
Output short circuit duration
tshort
indefinite
s
Operating temperature range
Tamb
–40 to +85
°C
Storage temperature range
Tstg
–65 to +150
°C
Thermal resistance (DIP40)
RthJA
110
K/W
Soldering temperature (t
≤ 10 s)
Tsld
260
°C
Stresses greater than those listed under absolute maxi-
mum ratings may cause permanent damage to the device.
This is a stress rating only and functional operation of the
device at any condition above those indicated in the op-
erational section of these specification is not implied.
Exposure to absolute maximum rating condition for an
extended period may affect device reliability. All inputs
and outputs are protected against high electrostatic volt-
ages or electric fields. However, precautions to minimize
the build-up of electrostatic charges during handling are
recommended. Reliability of operation is enhanced if un-
used inputs are connected to an appropriate logic voltage
level (e.g. VDD).
3.2
DC Operating Characteristics
Supply voltage VDD = 5 V, VSS = 0 V, Tamb = 25°C unless otherwise specified.
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
Power supply
Active current
(CPU active, RC osc. with
ext. R 200 k
W)
fSYSCL = 2 MHz
VDD = 2.4 V, Note 1
VDD = 5.0 V
VDD = 6.2 V, Note 1
IDD
0.35
1.0
1.25
mA
Power down current
(CPU sleep, RC oscillator
active,
SUBCL = SYSCL/64)
fSYSCL = 2 MHz
VDD = 2.4 V, Note 1
VDD = 5.0 V
VDD = 6.2 V, Note 1
IPD
10
20
25
A
Sleep current
(CPU sleep, SYSCL
stopped, 32 kHz osc. activ)
VDD = 2.4 V, Note 1
VDD = 5.0 V
VDD = 6.2 V, Note 1
ISleep
0.4
1.0
1.2
0.7
1.5
1.8
A
Parameters
Test Conditions / Pins
Symbol
Min.
Typ.
Max.
Unit
Power-on reset threshold voltage
POR threshold voltage
VPOR
1.8
2.0
V
POR hysteresis
Note 1
VPOR
0.25
0.3
V
Schmitt-trigger input voltage:
Negative-going threshold
voltage
VDD = 2.4 to 6.2 V
VT–
VSS
0.3*VDD
V
Positive-going threshold
voltage
VDD = 2.4 to 6.2 V
VT+
0.7*VDD
VDD
V
Hysteresis (VT+ – VT–)
VDD = 2.4 to 6.2 V
VH
0.1*VDD
Note 1:
Parameter not subject to production test