參數(shù)資料
型號(hào): LRS1338A
廠商: Sharp Corporation
英文描述: Stacked Chip 8M Flash Memory and 2M SRAM
中文描述: 堆疊芯片800萬快閃記憶體以及2M SRAM
文件頁數(shù): 5/36頁
文件大?。?/td> 218K
代理商: LRS1338A
Stacked Chip (8M Flash & 2M SRAM)
LRS1338A
Data Sheet
5
DC ELECTRICAL CHARACTERISTICS
T
A
= -40
°
C to + 85
°
C, V
CC
= 2.7 V to 3.6 V
NOTES:
1. This value is read current (I
CCR
+ I
PPR
) of flash memory.
2. Sampled but not 100% tested.
3. This value is operation current (I
CCW
+ I
PPW
) of flash memory.
4. This value is operation current (I
CCE
+ I
PPE
) of flash memory.
5. This value is operation current (I
CC1
) of SRAM.
6. This value is standby current (I
CCS
+ I
PPS
) of flash memory.
7. This value is deep power down current (I
CCD
+ I
PPD
) of
flash memory.
8. This value is standby current (I
SB1
) of SRAM
9. This value is standby current (I
SB
) of SRAM.
10.Reference values at V
CC
= 3.0 V and T
A
= +25
°
C
PARAMETER
Input leakage current
SYMBOL
I
LI
CONDITION
MIN.
-1.5
TYP.
MAX. UNIT NOTES
1.5
μA
V
IN
= 0V to V
CC
F-CE, S-CE = V
IH
or F-OE, S-OE = V
IH
or
F-WE, S-WE = V
IH
, V
I/O
= 0 V to V
CC
Read current, F-V
PP
F-V
CC
,
F-CE
0.2 V, V
IN
V
CC
0.2 V or
V
IN
0.2 V
t
CYCLE
= 200 ns, I
I/O
= 0 mA
Summation of V
CC
Byte Write or set lock-bit cur-
rent, and V
PP
Byte Write or set lock-bit current.
F-V
CC
3.0 V
Summation of V
CC
Block Erase or Clear Block
lock-bits current, and V
PP
Block Erase or Clear
Block lock-bits current. F-V
CC
3.0 V
Output leakage current
I
LO
-1.5
1.5
μA
Operating supply
current
F
I
CC
25
mA
1
57
mA
2, 3
42
mA
2, 4
S
I
CC
S-CE = 0.2 V, V
IN
V
CC
0.2 V or V
IN
0.2 V
t
CYCLE
= 200 ns, I
I/O
= 0 mA
25
mA
5
Standby current
F
I
SB
F-CE = V
IH
, RP = V
IH
F-CE
V
CC
0.2 V, RP
0.2 V
S-CE = V
IH
S-CE
V
CC
0.2 V
I
OL
= 2.0 mA
I
OH
= 1.0 mA
2.0
20
3.0
mA
μA
mA
6
7
8
S
I
SB
0.6
40
μA
9, 10
Output voltage
V
OL
,
V
OH
0.4
V
V
2.4
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