參數(shù)資料
型號(hào): LRS1338A
廠(chǎng)商: Sharp Corporation
英文描述: Stacked Chip 8M Flash Memory and 2M SRAM
中文描述: 堆疊芯片800萬(wàn)快閃記憶體以及2M SRAM
文件頁(yè)數(shù): 23/36頁(yè)
文件大?。?/td> 218K
代理商: LRS1338A
Stacked Chip (8M Flash & 2M SRAM)
LRS1338A
Data Sheet
23
FLASH AC CHARACTERISTICS — WRITE OPERATIONS
1
V
CC
= 2.7 V to 3.6 V, T
A
= -40
°
C to +85
°
C
NOTES:
1. Read timing characteristics during block erase and word write operations are the
same as during read-only operations. Refer to
AC Characteristics
section for read-only operations.
2. Sampled, not 100% tested.
3. Refer to Table 6 for valid A
IN
and D
IN
for block erase or word write.
4. V
PP
should be held at V
PPH
(and if necessary RP should be held at V
HH
) until
determination of block erase or word write success (SR.1, SR.3, SR.4, SR.5 = 0).
SYMBOL
t
AVAV
t
PHWL
t
ELWL
t
WLWH
t
PHHWH
t
SHWH
t
VPWH
t
AVWH
t
DVWH
t
WHDX
t
WHAX
t
WHEH
t
WHWL
t
WHGL
t
QVVL
t
QVPH
t
QVSL
PARAMETER
MIN.
120
1
10
50
100
100
100
50
50
5
5
10
30
0
0
0
0
MAX.
UNIT
ns
μs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
NOTES
Write Cycle Time
RP HIGH Recovery to WE Going LOW
CE Setup to WE Going LOW
WE Pulse Width
RP V
HH
to WE Going HIGH
WP V
IH
Setup to WE Going HIGH
V
PP
Setup to WE Going HIGH
Address Setup to WE Going HIGH
Data Setup to WE Going HIGH
Data Hold from WE HIGH
Address Hold from WE HIGH
CE Hold from WE HIGH
WE Pulse Width HIGH
Write Recovery before Read
V
PP
Hold from Valid SRD HIGH
RP V
HH
Hold from Valid SRD HIGH
WP V
IH
Hold from Valid SRD HIGH
2
2
2
2
3
3
2, 4
2, 4
2, 4
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