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參數(shù)資料
| 型號： | LRS1338A |
| 廠商： | Sharp Corporation |
| 英文描述： | Stacked Chip 8M Flash Memory and 2M SRAM |
| 中文描述： | 堆疊芯片800萬快閃記憶體以及2M SRAM |
| 文件頁數(shù)： | 27/36頁 |
| 文件大?。?/td> | 218K |
| 代理商： | LRS1338A |
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Stacked Chip (8M Flash & 2M SRAM)
LRS1338A
Data Sheet
27
RESET OPERATIONS
NOTES:
1. If RP is asserted while a block erase or word write operation is not executing,
the reset will complete within 100 ns.
2. When the device power-up holding RP LOW minimum 100 ns is required
after V
CC
has been in predefined range and also has been stable there.
BLOCK ERASE AND WORD WRITE PERFORMANCE
1
V
CC
= 2.7 V to 3.6 V, T
A
= 40
°
C to +85
°
C
NOTES:
1. Sampled, but not 100% tested.
2. Typical values measured at T
A
= +25
°
C and nominal voltages.
Subject to change based on device characterization.
3. Excludes system-level overhead.
Figure 15. AC Waveform for Reset Operation
Table 11. Reset AC Specifications
SYMBOL
PARAMETER
V
CC
= 2.7 V to 3.6 V
MIN.
UNIT
NOTES
MAX.
t
PLPH
RP Pulse LOW Time (if RP is tied to V
CC
,
this specification is not applicable)
V
CC
2.7 V to RP HIGH
100
ns
1
t
VPH
100
ns
2
V
IH
V
IL
t
PLPH
t
VPH
RP (P)
A. Reset during Block Erase or Word Write or Read Array Mode
B. RP rising Timing
2.7 V - 3.6 V
V
IL
V
CC
V
IH
V
IL
RP (P)
LRS1338A-15
SYMBOL
PARAMETER
V
PP
= 2.7 V to 3.6 V
MAX.
UNIT
NOTES
MIN.
TYP.
2
44.6
45.9
1.46
0.19
1.14
0.38
8
22
t
WHQV1
t
EHQV1
Word Write Time 32K-word Block
Word Write Time 4K-word Block
Block Write Time 32K-word Block
Block Write Time 4K-word Block
Block Erase Time 32K-word Block
Block Erase Time 4K-word Block
Word Write Suspend Latency Time to Read
Erase Suspend Latency Time to Read
μs
μs
sec
sec
sec
sec
μs
μs
3
3
3
3
3
3
t
WHQV2
t
EHQV2
t
WHRH1
, t
EHRH1
t
WHRH2
, t
EHRH2
7
18
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| LRS1341 | 制造商:SHARP 制造商全稱:Sharp Electrionic Components 功能描述:Stacked Chip 16M Flash Memory and 2M SRAM |
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| LRS1360C | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:MIXED MEMORY|SRAM+EEPROM|HYBRID|BGA|72PIN|PLASTIC |
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