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參數(shù)資料
| 型號： | LRS1338A |
| 廠商： | Sharp Corporation |
| 英文描述： | Stacked Chip 8M Flash Memory and 2M SRAM |
| 中文描述： | 堆疊芯片800萬快閃記憶體以及2M SRAM |
| 文件頁數(shù)： | 21/36頁 |
| 文件大?。?/td> | 218K |
| 代理商： | LRS1338A |
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Stacked Chip (8M Flash & 2M SRAM)
LRS1338A
Data Sheet
21
FLASH DC CHARACTERISTICS
NOTES:
1. All currents are in RMS unless otherwise noted.
2. CMOS inputs are either V
CC
± 0.2 V or GND ± 0.2 V. TTL inputs
are either V
IL
or V
IH
.
3. Automatic Power Savings (APS) reduces typical I
CCR
to 3 mA at
3.3 V V
CC
in static operation.
4. Sampled, not 100% tested.
5. I
CCWS
and I
CCES
are specified with the device de-selected. If read
or word written while in erase suspend mode, the device
’
s current
draw is the sum of I
CCWS
or I
CCES
and I
CCR
or I
CCW
, respectively.
6. Block erases and word writes are inhibited when V
PP
≤
V
PPLK
,
and not guaranteed in the range between V
PPLK
(MAX.) and
V
PPH
(MIN.).
7. Block erases and word writes are inhibited when the correspond-
ing RP = V
IH
or WP = V
IL
. Block erase and word write operations
are not guaranteed with V
CC
< 3.0 V or V
IH
< RP < V
HH
and
should not be attempted.
8. RP connection to a V
HH
supply is allowed for a maximum cumu-
lative period of 80 hours.
SYMBOL
PARAMETER
V
CC
= 2.7 V to 3.6 V
MIN.
UNIT
TEST
CONDITIONS
NOTES
MAX.
±0.5
±0.5
I
LI
I
LO
Input Load Current
Output Leakage Current
μA
μA
V
CC
= V
CC
MAX., V
IN
= V
CC
or GND
V
CC
= V
CC
MAX., V
OUT
= V
CC
or GND
CMOS Inputs, V
CC
= V
CC
MAX.,
CE = RP = V
CC
± 0.2 V
TTL Inputs, V
CC
= V
CC
MAX.,
CE = RP = V
IH
RP = GND ± 0.2 V
CMOS Inputs, V
CC
= V
CC
MAX.,
CE = GND, f = 5 MHz, I
OUT
= 0 mA
TTL Inputs, V
CC
= V
CC
MAX.,
CE = GND, f = 5 MHz, I
OUT
= 0 mA
V
PP
= V
PPH
V
PP
= V
PPH
1
1
I
CCS
V
CC
Standby Current
25
50
μA
1, 2
0.2
2
mA
1, 2
I
CCD
V
CC
Deep Power-Down Current
4
20
μA
1
I
CCR
V
CC
Read Current
15
25
mA
1, 2, 3
30
mA
1, 2, 3
I
CCW
I
CCE
I
CCWS
I
CCES
V
CC
Word Write Current
V
CC
Block Erase Current
V
CC
Word Write or Block
Erase Suspend Current
5
4
17
17
mA
mA
1, 4
1, 4
1
6
mA
CE = V
IH
1, 5
I
PPS
I
PPR
V
PP
Standby or Read Current
±2
10
0.1
12
8
±15
20.0
5
40
25
μA
μA
μA
mA
mA
V
PP
≤
V
CC
V
PP
> V
CC
RP = GND ± 0.2 V
V
PP
= V
PPH
V
PP
= V
PPH
1
1
1
I
PPD
I
PPW
I
PPE
I
PPWS
I
PPES
V
IL
V
IH
V
OL
V
OH1
V
PP
Deep Power-Down Current
V
PP
Word Write Current
V
PP
Block Erase Current
V
PP
Word Write or Block Erase
Suspend Current
Input LOW Voltage
Input HIGH Voltage
Output LOW Voltage
Output HIGH Voltage (TTL)
1, 4
1, 4
10
200
μA
V
PP
= V
PPH
1
-0.5
2.0
0.8
V
V
V
V
V
V
4
4
4
4
4
4
V
CC
+ 0.5
0.4
V
CC
= V
CC
MIN., I
OL
= 2.0 mA
V
CC
= V
CC
MIN., I
OH
= 1.0 mA
V
CC
= V
CC
MIN., I
OH
= 2.5 mA
V
CC
= V
CC
MIN., I
OH
= -100 μA
2.4
V
OH2
Output HIGH Voltage (CMOS)
0.85 V
CC
V
CC
-0.4
V
PPLK
V
PP
Lockout during
Normal Operations
V
PP
during Word Write or Block
Erase Operations
V
CC
Lockout Voltage
RP Unlock Voltage
1.5
V
4, 6
V
PPH
2.7
3.6
V
V
LKO
V
HH
2.0
11.4
V
V
12.6
Unable WP
7, 8
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