參數(shù)資料
型號： IBM038329NL6B
廠商： IBM Microeletronics
英文描述： 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動態(tài)RAM（帶內(nèi)置的圖形性能）)
中文描述： 256K × 32同步圖形RAM（256K × 32位高性能800萬的CMOS同步動態(tài)隨機存儲器（帶內(nèi)置的圖形性能））
文件頁數(shù)： 46/66頁
文件大?。?/td> 952K
代理商： IBM038329NL6B
IBM038329NL6B
IBM038329NP6B
256K x 32 Synchronous Graphics RAM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 46 of 66
03K4292.E35604
Revised 3/98
Write Command (WR)
The following pages illustrate the Write operations for various cases with the help of timing diagrams.
Write bursts are initiated with a Write command. The starting column and bank address is provided with the
Write command, normal or Block Write is selected, and Auto Precharge is either enabled or disabled for that
access. If Auto Precharge is enabled, the row being accessed is precharged automatically at the completion
of the burst.
During Write bursts, the first valid data-in element will be registered coincident with the Write command. Sub-
sequent data elements will be registered on successive positive clock edges. Upon completion of a fixed-
length burst, assuming no other commands have been initiated, the DQs will remain High-Z, and any addi-
tional data will be ignored. A full-page burst will continue until terminated (at the end of the page, it will wrap
to column 0 and continue).
A fixed-length Write burst may be followed by or truncated with a subsequent Write burst or Block Write com-
mand, provided that Auto Precharge was not activated. A full page Write burst can be truncated with a subse-
quent Write burst or Block Write command. The new Write or Block Write command can be issued on any
clock following the previous Write command, and the data from the new command replaces and data remain-
ing from the previous command.
A fixed-length Write burst may be followed by or truncated with a subsequent Read burst, provided that Auto
Precharge was not activated. A full-page Write burst can be truncated with a subsequent Read burst. Once
the Read command is registered, the data inputs will be ignored and Writes will not be executed.
A fixed-length Write burst may be followed by or truncated with a Precharge command to the same bank, pro-
vided that Auto Precharge was not activated. A full-page Write burst may be truncated with a Precharge com-
mand to the same bank.
The Precharge command should be issued x cycles (x = t
WR
/t
CK
rounded up to
the next whole number) after the clock edge at which the last desired input data element is registered.
In addition, the DQM signals must be used to mask input data, starting with the clock edge following the last
desired data element and ending with the clock edge on which the Precharge command is entered. A Pre-
charge command issued at the optimum time provides the same operation that would result from the same
fixed-length Burst with Auto Precharge.
Disadvantages of Write Command with Auto Precharge
1. Back to back Read/Write bursts cannot be initiated. The Read/Write command with Auto Precharge will
automatically initiate a precharge of the row in the selected bank. Most of the applications require subse-
quent Read/Write bursts in the same page.
2. The Auto Precharge command does not allow truncation of fixed-length bursts. It also does not apply to
full-page bursts.
Logic Table for Write Command
Mnemonic
CKE
CS
RAS
CAS
WE
DSF
DQM
BA (A9)
A8
A7-A0
WR
H
L
H
L
L
L
0
BS
L
Column
WRA
H
L
H
L
L
L
0
BS
H
Column
BW
H
L
H
L
L
H
0
BS
L
Column
BWA
H
L
H
L
L
H
0
BS
H
Column
Note:
Input data at DQ pins at Block Write command time is registered as a column mask for that block of columns.
相關(guān)PDF資料
PDF描述
IBM038329NP6B 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動態(tài)RAM（帶內(nèi)置的圖形性能）)
IBM041812PQKB 64K X 18 BURST SRAM(64K X 18高性能可猝發(fā)同步CMOS靜態(tài)RAM)
IBM041813PPLB 64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝發(fā)流水線式線式高性能靜態(tài)RAM)
IBM041813PQKB 64K X 18 Burst Pipeline SRAM(1M（64K X 18）高性能同步可猝發(fā)管線式靜態(tài)RAM)
IBM041814PPLB 64K X 18 BURST SRAM(1M (64K X 18)同步可猝發(fā)高性能靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM038329NQ6A-7R5 制造商:IBM 功能描述:
IBM041812PQKB10 制造商:IBM 功能描述:*
IBM041812PQKB11 制造商:IBM 功能描述:*
IBM041813PQKB5 制造商:IBM 功能描述:
IBM0418A4ACLAA-4F 制造商:IBM 功能描述:
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