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參數(shù)資料
| 型號： | IBM038329NL6B |
| 廠商： | IBM Microeletronics |
| 英文描述： | 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動態(tài)RAM（帶內(nèi)置的圖形性能）) |
| 中文描述： | 256K × 32同步圖形RAM（256K × 32位高性能800萬的CMOS同步動態(tài)隨機存儲器（帶內(nèi)置的圖形性能）） |
| 文件頁數(shù)： | 21/66頁 |
| 文件大?。?/td> | 952K |
| 代理商： | IBM038329NL6B |
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IBM038329NL6B
IBM038329NP6B
256K x 32 Synchronous Graphics RAM
03K4292.E35604
Revised 3/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 21 of 66
Write (WR)
The Write command is used to initiate a burst write access to an active row. The value on BA (A
9
) selects the
bank, and the address provided on inputs A
7
-A
0
selects the starting column location. The value on A
8
deter-
mines whether or not Auto Precharge is used. If A
8
is “1”, Auto Precharge is used. If Auto Precharge is
selected, the row being accessed will be precharged at the end of write burst; if Auto Precharge is not
selected, the row will remain open for subsequent accesses.
If a particular DQM is registered high, the
corresponding data inputs will be ignored and the write will not be executed to that byte location.
Block Write (BW)
The Block Write command is used to write a single data value to the block of eight consecutive column loca-
tions addressed by inputs A
7
-A
3
. The data is provided by the Color Register which must be loaded prior to the
Block Write cycle by invoking the LSMR cycle. The input data on the DQs which is registered coincident with
the Block Write command is used to mask specific column/byte combinations within the block.
The DQM sig-
nals operate the same way as for Write cycles, but are applied to all eight columns in the selected
block.
Precharge (PRE)
The Precharge command is used to deactivate the open row in a particular bank or the open row in both
banks. The bank(s) will be available for row access some specified time (t
RP
) after the Precharge command
is issued. Input A
8
determines whether one or both banks are to be precharged, and input BA (A
9
) selects the
bank. If A
8
is “1”, both banks are to be precharged and BA (A
9
) is “don't care.” Once a bank is precharged (or
deactivated), it is in the idle state and must be activated prior to any Read, Write, or Block Write commands
being issued to that bank.
Auto Precharge (PREA)
The Auto Precharge feature allows the user to issue a Read, Write, or Block Write command that automati-
cally performs a precharge upon the completion of the Block Write access or Read or Write burst,
except in
the Full Page Burst mode, where it has no effect.
The use of this feature eliminates the need to “manually” issue a Precharge command during the functional
operation of the SGRAM.
Burst Terminate (BST)
The Burst Terminate command is used to truncate either fixed-length or Full Page Bursts.
Auto Refresh (REF)
Auto Refresh is used to refresh the various rows in the SGRAM and is analogous to CAS-before-RAS (CBR)
Refresh in DRAMs. This command must be issued each time a refresh is required. The addressing is gener-
ated by the internal refresh counter; therefore, the address bits are “don't care” during a CBR cycle. The
SGRAM requires that 1024 rows be refreshed every 16ms (t
REF
). This refresh can be accomplished either by
providing an Auto Refresh command every 15.6
μ
s or all 1024 Auto Refresh commands can be issued in a
burst at the minimum cycle rate (t
RC
=100ns) once every 16ms.
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|---|---|
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