參數(shù)資料
型號: IBM038329NL6B
廠商: IBM Microeletronics
英文描述: 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動(dòng)態(tài)RAM(帶內(nèi)置的圖形性能))
中文描述: 256K × 32同步圖形RAM(256K × 32位高性能800萬的CMOS同步動(dòng)態(tài)隨機(jī)存儲器(帶內(nèi)置的圖形性能))
文件頁數(shù): 25/66頁
文件大小: 952K
代理商: IBM038329NL6B
IBM038329NL6B
IBM038329NP6B
256K x 32 Synchronous Graphics RAM
03K4292.E35604
Revised 3/98
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 25 of 66
Timing Specifications and Conditions
(0
°
C
t
A
70
°
C; V
CC
/V
CCQ
= 3.3V
±
0.3V)
1. All voltages are referenced to V
SS
(GND).
2. Icc depends on output loading and cycle rates. Specified values are obtained with minimum cycle time and the outputs open.
3. Enables on-chip refresh and address counters.
4. The minimum specifications are used only to indicate cycle time at which proper operation over the full temperature range (0
°
C
T
A
70
°
C).
5. An initial pause of 100ms is required after power up, followed by two Auto Refresh commands to ensure proper device operation.
6. The timing specifications assume a transition time (t
T
= 1ns).
7. AC timing tests have V
IL
= 0.8V and VIH = 2.0V with timing referenced to 1.4V crossover point.
I/O Timing Diagrams
50
V
T
=1.4V
30pF
Z
0
=50
V
OUT
LVTTL AC Test Load
tCH
tCK
tCL
tSetup
tHold
2.0V
1.4V
0.8V
2.0V
1.4V
0.8V
CLK
Input
Output
tAC
Undefined
Dout
tOH
相關(guān)PDF資料
PDF描述
IBM038329NP6B 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動(dòng)態(tài)RAM(帶內(nèi)置的圖形性能))
IBM041812PQKB 64K X 18 BURST SRAM(64K X 18高性能可猝發(fā)同步CMOS靜態(tài)RAM)
IBM041813PPLB 64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝發(fā)流水線式線式高性能靜態(tài)RAM)
IBM041813PQKB 64K X 18 Burst Pipeline SRAM(1M(64K X 18)高性能同步可猝發(fā)管線式靜態(tài)RAM)
IBM041814PPLB 64K X 18 BURST SRAM(1M (64K X 18)同步可猝發(fā)高性能靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM038329NQ6A-7R5 制造商:IBM 功能描述:
IBM041812PQKB10 制造商:IBM 功能描述:*
IBM041812PQKB11 制造商:IBM 功能描述:*
IBM041813PQKB5 制造商:IBM 功能描述:
IBM0418A4ACLAA-4F 制造商:IBM 功能描述: