- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379203 > IBM038329NL6B (IBM Microeletronics) 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動態(tài)RAM（帶內置的圖形性能）) PDF資料下載
參數(shù)資料
| 型號： | IBM038329NL6B |
| 廠商： | IBM Microeletronics |
| 英文描述： | 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動態(tài)RAM（帶內置的圖形性能）) |
| 中文描述： | 256K × 32同步圖形RAM（256K × 32位高性能800萬的CMOS同步動態(tài)隨機存儲器（帶內置的圖形性能）） |
| 文件頁數(shù)： | 30/66頁 |
| 文件大小： | 952K |
| 代理商： | IBM038329NL6B |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁第28頁第29頁當前第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁
IBM038329NL6B
IBM038329NP6B
256K x 32 Synchronous Graphics RAM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 30 of 66
03K4292.E35604
Revised 3/98
Bank/Row Activation Command (ACT)
Before any Read or Write commands can be issued to a bank within the SGRAM, a row in that bank must be
“opened”. An Active command is used for this purpose. The Active command is also used to determine
whether or not the Write-per-Bit mask is to be applied during Write and Block Write cycles within that row.
A subsequent Active command to a different row in the same bank can only be issued after the previous
Active row has been “closed”. The minimum time interval between successive Active commands to the same
bank is defined by t
RC
.
A subsequent Active command to the other bank can be issued while the first bank is being accessed, which
results in a reduction of total row access overhead. The minimum time interval between successive Active
commands to different banks is defined by t
RRD
.
The Example Meeting diagram below shows the Read/Write command delay in the same bank after the
Active command has been registered. Also shown are the various timing parameters that are applicable to
the Read/Write operations.
Logic Table for Active Command
Mnemonic
CKE
CS
RAS
CAS
WE
DSF
DQM
BA (A9)
A8
A7-A0
ACT
H
L
L
H
H
L
X
BS
Row Address
ACTM
H
L
L
H
H
H
X
BS
Row Address
Example Meeting t
RCD
(min) when 2
≤
t
RCD
(min)/t
CK
≤
3
NOP
NOP
CLK
Command
0 1 2 3 4
t
RCD
ACTIVE
WRITE
READor
H or L
相關PDF資料 |
PDF描述 |
|---|---|
| IBM038329NP6B | 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動態(tài)RAM（帶內置的圖形性能）) |
| IBM041812PQKB | 64K X 18 BURST SRAM(64K X 18高性能可猝發(fā)同步CMOS靜態(tài)RAM) |
| IBM041813PPLB | 64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝發(fā)流水線式線式高性能靜態(tài)RAM) |
| IBM041813PQKB | 64K X 18 Burst Pipeline SRAM(1M（64K X 18）高性能同步可猝發(fā)管線式靜態(tài)RAM) |
| IBM041814PPLB | 64K X 18 BURST SRAM(1M (64K X 18)同步可猝發(fā)高性能靜態(tài)RAM) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IBM038329NQ6A-7R5 | 制造商:IBM 功能描述: |
| IBM041812PQKB10 | 制造商:IBM 功能描述:* |
| IBM041812PQKB11 | 制造商:IBM 功能描述:* |
| IBM041813PQKB5 | 制造商:IBM 功能描述: |
| IBM0418A4ACLAA-4F | 制造商:IBM 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。