參數(shù)資料
型號(hào)： IBM038329NL6B
廠商： IBM Microeletronics
英文描述： 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動(dòng)態(tài)RAM（帶內(nèi)置的圖形性能）)
中文描述： 256K × 32同步圖形RAM（256K × 32位高性能800萬的CMOS同步動(dòng)態(tài)隨機(jī)存儲(chǔ)器（帶內(nèi)置的圖形性能））
文件頁數(shù)： 20/66頁
文件大?。?/td> 952K
代理商： IBM038329NL6B
IBM038329NL6B
IBM038329NP6B
256K x 32 Synchronous Graphics RAM
IBM Corporation. All rights reserved.
Use is further subject to the provisions at the end of this document.
Page 20 of 66
03K4292.E35604
Revised 3/98
Commands
The Function Truth Table on page 12 provides a quick reference of available commands.
Device Deselect (INHBT)
The device deselect or inhibit function prevents commands from being executed by the SGRAM, regardless
of whether the CLK signal is enabled. The device is effectively deactivated (CS is high).
No Operation (NOP)
The NOP command is used to perform a no operation to an SGRAM which is selected (CS is low). This pre-
vents unwanted commands from being registered during idle or wait states. The execution of the command(s)
already in progress will not be affected.
Load Mode Register (LMR)
The Mode Register is loaded via address input pins BA (A
9
)-A
0
.
The LMR command can only be issued
when both banks are idle, and a subsequent executable command cannot be issued until t
MTC
(1 CLK
latency) is met.
Load Special Mode Register (LSMR)
The LSMR command is used to load either the Color Register or the Mask Register. The control information
is provided on inputs BA (A
9
)-A
0
, while the data for the Color or Mask Register is provided on the DQs. The
LSMR command can be issued when both banks are idle, or one or both banks are active but with no Read,
Write or Block Write accesses in progress.
A subsequent command cannot be issued until t
SML
(2 CLK
latency) is met.
Active (ACT)
The ACT command is used to open (or activate) a row in a particular bank. The value on BA (A
9
) selects the
bank, and the address provided on input pins A
8
-A
0
selects the row. This row remains open for accesses until
a Precharge command is issued to the bank.
A Precharge command must be issued before opening a
different row in the same bank.
Active with WPB (ACTM)
ACTM command is similar to the ACT command, except that the Write-per-Bit mask is activated. Any Write or
Block Write cycles to the selected bank/row, while active, will be masked according to the contents of the
Mask Register.
Read (RD)
The Read command is used to initiate a burst read access to an active row. The value on BA (A
9
) selects the
bank, and the address provided on inputs A
7
-A
0
selects the starting column location. The value on A
8
deter-
mines whether or not Auto Precharge is used. If A
8
is “1”, Auto Precharge is used. If Auto Precharge is
selected, the row being accessed will be precharged at the end of the read burst; if Auto Precharge is not
selected, the row will remain open for subsequent accesses.
If a particular DQM was registered high, the
corresponding DQs appearing 2 clocks later on the output pins will be High-Z.
相關(guān)PDF資料
PDF描述
IBM038329NP6B 256K x 32 Synchronous Graphics RAM(256K x 32 高性能8M位CMOS同步動(dòng)態(tài)RAM（帶內(nèi)置的圖形性能）)
IBM041812PQKB 64K X 18 BURST SRAM(64K X 18高性能可猝發(fā)同步CMOS靜態(tài)RAM)
IBM041813PPLB 64K X 18 BURST PIPELINE SRAM(1M (64K X 18)同步可猝發(fā)流水線式線式高性能靜態(tài)RAM)
IBM041813PQKB 64K X 18 Burst Pipeline SRAM(1M（64K X 18）高性能同步可猝發(fā)管線式靜態(tài)RAM)
IBM041814PPLB 64K X 18 BURST SRAM(1M (64K X 18)同步可猝發(fā)高性能靜態(tài)RAM)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IBM038329NQ6A-7R5 制造商:IBM 功能描述:
IBM041812PQKB10 制造商:IBM 功能描述:*
IBM041812PQKB11 制造商:IBM 功能描述:*
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IBM0418A4ACLAA-4F 制造商:IBM 功能描述:
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