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| 型號： | W9712G8JB-3 |
| 廠商： | WINBOND ELECTRONICS CORP |
| 元件分類： | DRAM |
| 英文描述： | DDR DRAM, PBGA60 |
| 封裝： | 8 X 12.50 MM, ROHS COMPLIANT, WBGA-60 |
| 文件頁數(shù)： | 3/86頁 |
| 文件大?。?/td> | 1039K |
| 代理商： | W9712G8JB-3 |
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W9712G8JB
Publication Release Date: Oct. 12, 2010
- 11 -
Revision A01
SDRAM. Burst address sequence type is defined by A3, CAS Latency is defined by A[6:4]. The DDR2
does not support half clock latency mode. A7 is used for test mode. A8 is used for DLL reset. A7 must
be set to LOW for normal MRS operation. Write recovery time WR is defined by A[11:9]. Refer to the
table for specific codes.
BA1 BA0
A12
A11
A10
A9A8A7A6A5A4A3A2A1A0
0
PD
WR
DLL
BT
CAS Latency
Burst Length
TM
A8
0
1
DLL Reset
No
Yes
BA1 BA0
00
01
10
11
MRS mode
MR
EMR (1)
EMR (2)
EMR (3)
A12
1
0
Active power down exit time
Fast exit (use tXARD)
Slow exit (use tXARDS)
Burst Length
Address Field
Mode Register
Write recovery for Auto-precharge
CAS Latency
A6
0
1
A5
0
1
0
1
A4
0
1
0
1
0
1
0
Latency
Reserved
3
4
5
7
6
Reserved
A2
0
A1
1
A0
0
1
BL
4
8
A11
0
1
A10
0
1
0
1
A9
0
1
0
1
0
1
0
WR *
Reserved
2
3
4
5
6
8
7
A7
0
1
Mode
Normal
Test
A3
0
1
Burst Type
Sequential
Interleave
0
DD
R2-667
(-3)
DD
R2-800
(-25)
DDR
2-1066
(-18)
DDR
2-800
(-
25)
DD
R2-106
6(-18)
DDR
2-667
(-
3)
Note:
1. WR (write recovery for Auto-precharge) min is determined by tCK(avg) max and WR max is determined by tCK(avg) min.
WR[cycles] = RU{ tWR[nS] / tCK(avg)[nS] }, where RU stands for round up. The mode register must be programmed to this
value. This is also used with tRP to determine tDAL.
Figure 2 – Mode Register Set (MRS)
7.2.2
Extend Mode Register Set Commands (EMRS)
7.2.2.1
Extend Mode Register Set Command (1), EMR (1)
( CS = "L", RAS = "L", CAS = "L", WE = "L", BA0 = "H", BA1 = "L, A0 to A11 = Register data)
The extended mode register (1) stores the data for enabling or disabling the DLL, output driver
strength, additive latency, ODT, DQS disable, OCD program. The default value of the extended
mode register (1) is not defined, therefore the extended mode register (1) must be programmed during
initialization for proper operation. The DDR2 SDRAM should be in all bank precharge with CKE
already high prior to writing into the extended mode register (1). The mode register set command
cycle time (tMRD) must be satisfied to complete the write operation to the extended mode register (1).
Extended mode register (1) contents can be changed using the same command and clock cycle
requirements during normal operation as long as all banks are in the precharge state. A0 is used for
DLL enable or disable. A1 is used for enabling a reduced strength output driver. A[5:3] determines the
additive latency, A[9:7] are used for OCD control, A10 is used for DQS disable and A11 is used for
RDQS enable. A2 and A6 are used for ODT setting.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| W971GG6JB | 制造商:WINBOND 制造商全稱:Winbond 功能描述:8M ? 8 BANKS ? 16 BIT DDR2 SDRAM |
| W971GG6JB-18 | 制造商:Winbond Electronics Corp 功能描述:1GB DDR2 制造商:Winbond Electronics Corp 功能描述:IC DDR2 SDRAM 1GBIT 1.875NS |
| W971GG6JB-25 | 制造商:Winbond Electronics Corp 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA 制造商:Winbond Electronics 功能描述:64MBX16 DDR2 制造商:Winbond 功能描述:DRAM Chip DDR2 SDRAM 1G-Bit 64Mx16 1.8V 84-Pin WBGA |
| W971GG6JB25I | 功能描述:IC DDR2 SDRAM 1GBIT 84WBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:3,000 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:32K (4K x 8) 速度:100kHz，400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 125°C 封裝/外殼:8-SOIC（0.154"，3.90mm 寬） 供應商設備封裝:8-SOIC 包裝:帶卷 (TR) 其它名稱:CAV24C32WE-GT3OSTR |
| W971GG6JB-25I | 制造商:Winbond Electronics 功能描述:-40~85 1GB DDR2 FOR INDUSTRY |
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