參數(shù)資料
型號: S71AL016M40
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和RAM
文件頁數(shù): 63/68頁
文件大?。?/td> 728K
代理商: S71AL016M40
February 23, 2005 S71AL016M_M0_A0
S71AL016M
63
A d v a n c e I n f o r m a t i o n
Switching Waveforms
Notes:
1.
To achieve 55-ns performance, the read access should be CE# controlled. In this case t
ACE
is the critical parameter and t
SK
is
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable
within 10 ns after the start of the read cycle.
Device is continuously selected. OE#, CE# = V
IL
.
2.
3.
WE# is High for Read Cycle.
Notes:
1.
To achieve 55-ns performance, the read access should be CE# controlled. In this case t
ACE
is the critical parameter and t
SK
is
satisfied when the addresses are stable prior to chip enable going active. For the 70-ns cycle, the addresses must be stable
within 10 ns after the start of the read cycle.
WE# is High for Read Cycle.
2.
Figure 24. Read Cycle 1 (Address Transition Controlled)
Figure 25. Read Cycle 2 (OE# Controlled)
ADDRESS
DATA OUT
PREVIOUS DATA VALID
DATA VALID
t
RC
tAA
tOHA
t
SK
DATA VALID
t
RC
t
ACE
t
DOE
t
t
LZCE
HIGH IMPEDENCE
t
HZOE
HIGH
IMPEDENCE
ADDRESS
CE
2
t
HZBE
t
LZBE
t
HZCE
DATA OUT
t
DBE
t
SK
CE#1
BHE#/BLE#
OE#
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