參數(shù)資料
型號: S71AL016M40
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和RAM
文件頁數(shù): 57/68頁
文件大?。?/td> 728K
代理商: S71AL016M40
February 23, 2005 S71AL016M_M0_A0
S71AL016M
57
A d v a n c e I n f o r m a t i o n
Notes:
1.
Typical program and erase times assume the following conditions: 25
°
C, V
CC
= 3.0 V, 10,000 cycles, checkerboard data
pattern.
Under worst case conditions of 90°C, V
CC
= 2.7 V, 100,000 cycles.
The typical chip programming time is considerably less than the maximum chip programming time listed, since most words
program faster than the maximum program times listed.
In the pre-programming step of the Embedded Erase algorithm, all words are programmed to 00h before erasure.
2.
3.
4.
5.
System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See
Table 2 on page 20
and
Table 3 on page 21
for further information on command definitions.
Notes:
1.
2.
Sampled, not 100% tested.
Test conditions T
A
= 25°C, f = 1.0 MHz.
Table 18. Erase and Programming Performance
Parameter
Typ (Note 1)
Max (Note 2)
Unit
Comments
Sector Erase Time
0.7
7.5
s
Excludes 00h programming
prior to erasure (Note 4)
Chip Erase Time
32
s
Word Programming Time
18
μs
Excludes system level
overhead (Note 5)
Chip Programming Time
(Note 3)
Word Mode
19
s
Table 19. TSOP Pin and BGA Package Capcitance
Parameter Symbol
Parameter Description
Test Setup
Typ
Max
Unit
C
IN
Input Capacitance
V
IN
= 0
TSOP
6
7.5
pF
BGA
4.2
5.0
pF
C
OUT
Output Capacitance
V
OUT
= 0
TSOP
8.5
12
pF
BGA
5.4
6.5
pF
C
IN2
Control Pin Capacitance
V
IN
= 0
TSOP
7.5
9
pF
BGA
3.9
4.7
pF
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