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參數(shù)資料
| 型號(hào)： | S71AL016M40 |
| 廠商： | Spansion Inc. |
| 英文描述： | Stacked Multi-Chip Product (MCP) Flash Memory and RAM |
| 中文描述： | 堆疊式多芯片產(chǎn)品（MCP）的閃存和RAM |
| 文件頁(yè)數(shù)： | 28/68頁(yè) |
| 文件大?。?/td> | 728K |
| 代理商： | S71AL016M40 |
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28
S71AL016M
S71AL016M_M0 A0 February 23, 2005
A d v a n c e I n f o r m a t i o n
Table 8. Device Geometry Definition
Addresses
Data
Description
27h
0015h
Device Size = 2
N
byte
28h
29h
0002h
0000h
Flash Device Interface description (refer to CFI publication 100)
2Ah
2Bh
0000h
0000h
Max. number of byte in multi-byte write = 2
N
(00h = not supported)
2Ch
0004h
Number of Erase Block Regions within device
2Dh
2Eh
2Fh
30h
0000h
0000h
0040h
0000h
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
31h
32h
33h
34h
0001h
0000h
0020h
0000h
Erase Block Region 2 Information
35h
36h
37h
38h
0000h
0000h
0080h
0000h
Erase Block Region 3 Information
39h
3Ah
3Bh
3Ch
001Eh
0000h
0000h
0001h
Erase Block Region 4 Information
Table 9. Primary Vendor-Specific Extended Query (Sheet 1 of 2)
Addresses
Data
Description
40h
41h
42h
0050h
0052h
0049h
Query-unique ASCII string “PRI”
43h
0031h
Major version number, ASCII
44h
0033h
Minor version number, ASCII
45h
0008h
Address Sensitive Unlock (Bit 1–0)
0b = Required, 1b = Not Required
Process Technology (Bits 7–2)
0010b = 0.23 μm MirrorBit
46h
0002h
Erase Suspend
0 = Not Supported, 1 = To Read Only, 2 = To Read & Write
47h
0001h
Sector Protect
0 = Not Supported, X = Number of sectors in per group
48h
0001h
Sector Temporary Unprotect
00 = Not Supported, 01 = Supported
49h
0004h
Sector Protect/Unprotect scheme
04 = Standard Mode
4Ah
0000h
Simultaneous Operation
00 = Not Supported, 01 = Supported
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