參數(shù)資料
型號: S71AL016M40
廠商: Spansion Inc.
英文描述: Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述: 堆疊式多芯片產(chǎn)品(MCP)的閃存和RAM
文件頁數(shù): 49/68頁
文件大?。?/td> 728K
代理商: S71AL016M40
February 23, 2005 S71AL016M_M0_A0
S71AL016M
49
A d v a n c e I n f o r m a t i o n
AC Characteristics
Erase/Program Operations
Notes:
1.
2.
Not 100% tested.
See
Table 18 on page 57
for more information.
3.
If a program suspend command is issued within t
POLL
, the device requires t
POLL
before reading status data, once
programming resumes (that is, the program resume command is written). If the suspend command was issued after t
POLL
,
status data is available immediately after programming resumes. See
Figure 15, on page 50
.
Parameter
Speed Options
JEDEC
Std
Description
90
100
Unit
t
AVAV
t
WC
Write Cycle Time (Note 1)
Min
90
100
ns
t
AVWL
t
AS
Address Setup Time
Min
0
ns
t
WLAX
t
AH
Address Hold Time
Min
45
ns
t
DVWH
t
DS
Data Setup Time
Min
35
ns
t
WHDX
t
DH
Data Hold Time
Min
0
ns
t
OES
Output Enable Setup Time
Min
0
ns
t
GHWL
t
GHWL
Read Recovery Time Before Write
(OE# High to WE# Low)
Min
0
ns
t
ELWL
t
CS
CE# Setup Time
Min
0
ns
t
WHEH
t
CH
CE# Hold Time
Min
0
ns
t
WLWH
t
WP
Write Pulse Width
Min
35
ns
t
WHWL
t
WPH
Write Pulse Width High
Min
30
ns
t
WHWH1
t
WHWH1
Programming Operation (Note 2)
Typ
18
μs
t
WHWH2
t
WHWH2
Sector Erase Operation (Note 2)
Typ
1
sec
t
VCS
V
CC
Setup Time (Note 1)
Min
50
μs
t
RB
Recovery Time from RY/BY#
Min
0
ns
t
BUSY
Program/Erase Valid to RY/BY# Delay
Max
90
100
ns
t
POLL
Program Valid Before Status Polling (Note 3)
Max
4
μs
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