參數(shù)資料
型號(hào)： S71AL016M40
廠商： Spansion Inc.
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述： 堆疊式多芯片產(chǎn)品（MCP）的閃存和RAM
文件頁(yè)數(shù)： 60/68頁(yè)
文件大?。?/td> 728K
代理商： S71AL016M40
60
S71AL016M
S71AL016M_M0_A0 February 23, 2005
A d v a n c e I n f o r m a t i o n
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested)
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C
Ambient Temperature with Power Applied . . . . . . . . . . . . . . . -40°C to +85°C
Supply Voltage to Ground Potential . . . . . . . . . . . . . . . . . . . . . -0.4V to 4.6V
DC Voltage Applied to Outputs in High-Z
State (note 1, 2, 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.4V to 3.7V
DC Input Voltage (note 1, 2, 3) . . . . . . . . . . . . . . . . . . . . . . . . -0.4V to 3.7V
Output Current into Outputs (Low). . . . . . . . . . . . . . . . . . . . . . . . . . . 20 mA
Static Discharge Voltage. . . . . . . . . >2001V (per MIL-STD-883, Method 3015)
Latch-up Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >200 mA
Notes:
1.
2.
V
IH(MAX)
= V
CC
+ 0.5V for pulse durations less than 20 ns.
V
IL(MIN)
= –0.5V for pulse durations less than 20 ns.
3.
Overshoot and undershoot specifications are characterized and are not 100% tested.
Operating Range
Table 20. DC Electrical Characteristics (Over the Operating Range)
Notes:
1.
Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at V
CC
=
V
CC(typ.)
, T
A
= 25°C.
Ambient Temperature (T
A
)
V
CC
-25°C to +85°C
2.7V to 3.3V
Parameter
Description
Test Conditions
Min.
Typ.
(note 1)
Max
Unit
V
CC
Supply Voltage
2.7
3.3
V
V
OH
Output High Voltage
I
OH
= –1.0 mA
V
CC
- 0.4
V
OL
Output Low Voltage
I
OL
= 0.1 mA
0.4
V
IH
Input High Voltage
0.8 * V
CC
V
CC
+ 0.4
V
IL
Input Low Voltage
F = 0
-0.4
0.4
I
IX
Input Leakage Current
GND
≤
V
IN
≤
V
CC
-1
+1
μA
I
OZ
Output Leakage Current
GND
≤
V
OUT
≤
V
CC
, Output Disabled
-1
+1
I
CC
V
CC
Operating Supply Current
f = f
MAX
= 1/t
RC
V
CC
= 3.3V
I
= 0 mA
CMOS Levels
TBD
15
mA
f = 1 MHz
3
I
SB1
Automatic CE# Power-Down
Current—CMOS Inputs
CE#
≥
V
CC
– 0.2V, CE2
≤
0.2V
V
≥
V
CC
– 0.2V, V
≤
0.2V,
f = f
(Address and Data Only),
f=0 (OE#, WE#, BHE# and BLE#)
250
μA
I
SB2
Automatic CE# Power-Down
Current—CMOS Inputs
CE#
≥
V
CC
– 0.2V, CE2
≤
0.2V
V
≥
V
CC
– 0.2V or V
IN
≤
0.2V,
f = 0, V
CC
= 3.3V
40
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