參數(shù)資料
型號： S71AL016M40
廠商： Spansion Inc.
英文描述： Stacked Multi-Chip Product (MCP) Flash Memory and RAM
中文描述： 堆疊式多芯片產(chǎn)品（MCP）的閃存和RAM
文件頁數(shù)： 34/68頁
文件大?。?/td> 728K
代理商： S71AL016M40
34
S71AL016M
S71AL016M_M0 A0 February 23, 2005
A d v a n c e I n f o r m a t i o n
Sector Erase time-out immediately terminates the time-out period and suspends
the erase operation. Addresses are “don’t-cares” when writing the Erase Sus-
pend command.
When the Erase Suspend command is written during a sector erase operation,
the device requires a maximum of 20 μs to suspend the erase operation. How-
ever, when the Erase Suspend command is written during the sector erase time-
out, the device immediately terminates the time-out period and suspends the
erase operation.
After the erase operation is suspended, the system can read array data from or
program data to any sector not selected for erasure. (The device “erase sus-
pends” all sectors selected for erasure.) Normal read and write timings and
command definitions apply. Reading at any address within erase-suspended sec-
tors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and
DQ2 together, to determine if a sector is actively erasing or is erase-suspended.
See
Write Operation Status on page 38
for information on these status bits.
After an erase-suspended program operation is complete, the system can once
again read array data within non-suspended sectors. The system can determine
the status of the program operation using the DQ7 or DQ6 status bits, just as in
the standard program operation. See
Write Operation Status on page 38
for
more information.
The system may also write the autoselect command sequence when the device
is in the Erase Suspend mode. The device allows reading autoselect codes even
at addresses within erasing sectors, since the codes are not stored in the mem-
ory array. When the device exits the autoselect mode, the device reverts to the
Erase Suspend mode, and is ready for another valid operation. See
Autoselect
Command Sequence on page 30
for more information.
The system must write the Erase Resume command (address bits are
don’t
care
) to exit the erase suspend mode and continue the sector erase operation.
Further writes of the Resume command are ignored. Another Erase Suspend
command can be written after the device resumes erasing.
Note:
During an erase operation, this flash device performs multiple internal opera-
tions that are invisible to the system. When an erase operation is suspended, any of
the internal operations that were not fully completed must be restarted. As such, if
this flash device is continually issued suspend/resume commands in rapid succession,
erase progress is impeded as a function of the number of suspends. The result is a
longer cumulative erase time than without suspends. Note that the additional sus-
pends do not affect device reliability or future performance. In most systems rapid
erase/suspend activity occurs only briefly. In such cases, erase performance is not
significantly impacted.
相關PDF資料
PDF描述
S71GL016A Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71GL016A40 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71GL016A40BAW3J0 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71GL016A40BAW3J2 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
S71GL016A40BAW3J3 Stacked Multi-Chip Product (MCP) Flash Memory and RAM
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