參數(shù)資料
型號： S70WS512N00BFWAA2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存
文件頁數(shù)： 92/93頁
文件大?。?/td> 846K
代理商： S70WS512N00BFWAA2
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
93
A d v a n c e I n f o r m a t i o n
Wraparound
Special burst read mode where the read address
wraps
or returns back to the lowest
address boundary in the selected range of words, after reading the last Byte or Word
in the range, e.g. for a 4 word range of 0 to 3, a read beginning at word 2 would read
words in the sequence 2, 3, 0, 1.
Write
Interchangeable term for a program/erase operation where the content of a register
and or memory location is being altered. The term write is often associated with
writing
command cycles
to enter or exit a particular mode of operation.
Write Buffer
Multi-word area in which multiple words may be programmed as a single operation
.
A
Write Buffer may be 16 to 32 words long and is located on a 16 or 32 word boundary
respectively.
Write Buffer Programming
Method of writing multiple words, up to the maximum size of the Write Buffer, in one
operation. Using Write Buffer Programming results in
≥
8 times faster programming
time than by using single word at a time programming commands.
Write Operation Status
Allows the host system to determine the status of a program or erase operation by
reading several special purpose register bits
.
Term
Definition
相關PDF資料
PDF描述
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關代理商/技術參數(shù)
參數(shù)描述
S70WS512N00BFWAA3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70Y 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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