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參數資料
| 型號： | S70WS512N00BFWAA2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數： | 52/93頁 |
| 文件大?。?/td> | 846K |
| 代理商： | S70WS512N00BFWAA2 |
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March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
53
A d v a n c e I n f o r m a t i o n
Notes
1.
2.
Each PPB is individually programmed and all are erased in parallel.
While programming PPB for a sector, array data can be read from any other bank, except
Bank 0 (used for Data# Polling) and the bank in which sector PPB is being programmed.
Entry command disables reads and writes for the bank selected.
Reads within that bank return the PPB status for that sector.
Reads from other banks are allowed while writes are not allowed.
All Reads must be performed using the Asynchronous mode.
The specific sector address (A23-A14 WS256N, A22-A14 WS128N, A21-A14 WS064N) are
written at the same time as the program command.
If the PPB Lock Bit is set, the PPB Program or erase command does not execute and times-
out without programming or erasing the PPB.
There are no means for individually erasing a specific PPB and no specific sector address is
required for this operation.
10. Exit command must be issued after the execution which resets the device to read mode and
re-enables reads and writes for Bank 0
11. The programming state of the PPB for a given sector can be verified by writing a PPB
Status Read Command to the device as described by the flow chart shown in Figure 9.2.
3.
4.
5.
6.
7.
8.
9.
相關PDF資料 |
PDF描述 |
|---|---|
| S70WS512N00BAWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB0 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關代理商/技術參數 |
參數描述 |
|---|---|
| S70WS512N00BFWAA3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70Y | 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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