參數(shù)資料
型號(hào)： S70WS512N00BFWAA2
廠(chǎng)商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫(xiě)，突發(fā)模式閃存
文件頁(yè)數(shù)： 29/93頁(yè)
文件大?。?/td> 846K
代理商： S70WS512N00BFWAA2
30
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Notes:
1.
2.
3.
Any offset within the device works.
BA = Bank Address. The bank address is required.
base = base address.
The following is a C source code example of using the autoselect function to read the manu-
facturer ID. Refer to the
Spansion Low Level Driver User Guide
(available on
www.amd.com
and
www.fujitsu.com
) for general information on Spansion Flash memory software develop-
/* Here is an example of Autoselect mode (getting manufacturer ID) */
/* Define UINT16 example: typedef unsigned short UINT16; */
UINT16 manuf_id;
/* Auto Select Entry */
*( (UINT16 *)bank_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)bank_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)bank_addr + 0x555 ) = 0x0090; /* write autoselect command */
/* multiple reads can be performed after entry */
manuf_id = *( (UINT16 *)bank_addr + 0x000 ); /* read manuf. id */
/* Autoselect exit */
*( (UINT16 *)base_addr + 0x000 ) = 0x00F0; /* exit autoselect (write reset command) */
Software Functions and Sample Code
Table 8.10 Autoselect Entry
(LLD Function = lld_ AutoselectEntryCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
BAxAAAh
BAx555h
0x00AAh
Unlock Cycle 2
Write
BAx555h
BAx2AAh
0x0055h
Autoselect Command
Write
BAxAAAh
BAx555h
0x0090h
Table 8.11 Autoselect Exit
(LLD Function = lld_ AutoselectExitCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
base + XXXh
base + XXXh
0x00F0h
相關(guān)PDF資料
PDF描述
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWAA3 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB0 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB2 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱(chēng):SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70Y 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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