參數(shù)資料
型號： S70WS512N00BFWAA2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁數(shù)： 67/93頁
文件大?。?/td> 846K
代理商： S70WS512N00BFWAA2
68
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
12.8
AC Characteristics
12.8.1
CLK Characterization
Note:
The content in this document is Advance information for the S29WS064N and S29WS128N. Content in this document
is Preliminary for the S29W256N.
Figure 12.6 CLK Characterization
12.8.2
Synchronous/ Burst Read
Notes:
1.
2.
3.
Addresses are latched on the first rising edge of CLK.
Not 100% tested.
The content in this document is Advance information for the S29WS064N and S29WS128N. Content in this document
is Preliminary for the S29W256N.
Parameter
Description
54 MHz
66 MHz
80 MHz
Unit
f
CLK
CLK Frequency
Max
54
66
80
MHz
t
CLK
CLK Period
Min
18.5
15.1
12.5
ns
t
CH
CLK High Time
Min
7.4
6.1
5.0
ns
t
CL
CLK Low Time
t
CR
CLK Rise Time
Max
3
3
2.5
ns
t
CF
CLK Fall Time
Parameter
Description
54 MHz
66 MHz
80 MHz
Unit
JEDEC
Standard
t
IACC
t
BACC
t
ACS
t
ACH
t
BDH
t
CR
t
OE
t
CEZ
t
OEZ
t
CES
t
RDYS
t
RACC
t
CAS
t
AVC
t
AVD
t
AOE
Latency
Max
80
ns
Burst Access Time Valid Clock to Output Delay
Max
13.5
11.2
9
ns
Address Setup Time to CLK (
Note 1
)
Min
5
4
ns
Address Hold Time from CLK (
Note 1
)
Min
7
6
ns
Data Hold Time from Next Clock Cycle
Min
4
3
ns
Chip Enable to RDY Valid
Max
13.5
11.2
9
ns
Output Enable to Output Valid
Max
13.5
11.2
ns
Chip Enable to High Z (
Note 2
)
Max
10
ns
Output Enable to High Z (
Note 2
)
Max
10
ns
CE# Setup Time to CLK
Min
4
ns
RDY Setup Time to CLK
Min
5
4
3.5
ns
Ready Access Time from CLK
Max
13.5
11.2
9
ns
CE# Setup Time to AVD#
Min
0
ns
AVD# Low to CLK
Min
4
ns
AVD# Pulse
Min
8
ns
AVD Low to OE# Low
Max
38.4
ns
tCLK
tCL
tCH
tCR
tCF
CLK
相關(guān)PDF資料
PDF描述
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWAA3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70Y 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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