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參數(shù)資料
| 型號(hào)： | S70WS512N00BFWAA2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁(yè)數(shù)： | 14/93頁(yè) |
| 文件大小： | 846K |
| 代理商： | S70WS512N00BFWAA2 |
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12
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
5.2.2
Look-Ahead Connection Diagram
Notes:
1.
2.
Ball
3.0 V V
CC
NC
WP#/ACC
RY/BY
1.8 V V
CC
F-WP#
ACC
F-RDY/R-WAIT#
In a 3.0V system, the GL device used as Data has to have WP tied to V
CC
F1 and F2 denote XIP/Flash, F3 and F4 denote Data/Companion Flash
D2
D5
F5
Legend:
xRAM Shared
pSRAM Only
Flash/xRAM
Shared
Flash/Data
Shared
RFU
(Reserved for
Future Use)
Code Flash Only
X
MirrorBit Data
Only
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
X
RFU
B1
B10
RFU
B2
RFU
B9
RFU
F-DQS0
N1
F-DQS1
N10
RFU
N2
RFU
N9
RFU
P1
RFU
P10
P2
RFU
RFU
P9
A1
RFU
RFU
A10
RFU
A2
RFU
A9
D3
A7
ACC
D5
R-LB#
D4
D7
A8
WP#
D2
D8
A11
F3-CE#
D9
D6
WE#
F3
A5
F5
RDY/WAIT#
F4
A18
F7
A9
F2
A2
F8
A13
F9
A21
F6
A20
J 3
OE#
J 5
DQ3
J 4
DQ9
J 7
DQ13
F1-CE#
J 2
J 8
DQ15
R-CRE or
R-MRS
K9
J 9
J 6
DQ4
L3
DQ8
L5
DQ11
L4
DQ2
L7
DQ5
R-VCC
L2
L8
DQ14
WP#
L9
L6
A25
C3
VSS
F2-CE#
C5
C4
CLK
F-CLK#
C7
AVD#
C2
R-OE#
C8
F2-OE#
C9
F-VCC
C6
E3
A6
F-RST#
C7
R-UB#
D4
E7
A19
E2
A3
E8
A12
E9
A15
R1-CE2
E6
A4
G3
R2-CE1
G5
A17
G4
A10
G7
A1
G2
A14
G8
A22
G9
A23
G6
H3
VSS
R2-VCC
H5
H4
DQ1
H7
DQ6
H2
A0
H8
A24
H9
A16
R2-CE2
H6
DQ0
K3
F-VCC
K5
DQ10
K4
K7
DQ12
R1-CE1#
K2
DQ7
K8
VSS
R1-VCC
E6
M3
A26
F-VCC
M5
M4
VSS
R-VCCQ
M7
M2
A27
F-VCCQ
M8
R-CLK#
M9
F4-CE#
M6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S70WS512N00BAWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB0 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S70WS512N00BFWAA3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70Y | 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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