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參數(shù)資料
| 型號： | S70WS512N00BFWAA2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 68/93頁 |
| 文件大?。?/td> | 846K |
| 代理商： | S70WS512N00BFWAA2 |
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March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
69
A d v a n c e I n f o r m a t i o n
12.8.3
Timing Diagrams
Notes:
1.
Figure shows total number of wait states set to five cycles. The total number of wait states can be programmed from two
cycles to seven cycles.
If any burst address occurs at
address + 1
,
address + 2
, or
address + 3
, additional clock delay cycles are inserted, and
are indicated by RDY.
The device is in synchronous mode.
2.
3.
Figure 12.7 CLK Synchronous Burst Mode Read
Da
Da + 1
Da + n
OE#
Data (n)
Addresses
Aa
AVD#
RDY (n)
CLK
CE#
t
CES
t
ACS
t
AVC
t
AVD
t
ACH
t
OE
t
RACC
t
OEZ
t
CEZ
t
IACC
t
AOE
t
BDH
5 cycles for initial access shown.
18.5 ns typ. (54 MHz)
Hi-Z
Hi-Z
Hi-Z
1
2
3
4
5
6
7
t
RDYS
t
BACC
Da + 3
Da + 2
Da
Da + 1
Da + n
Data (n + 1)
RDY (n + 1)
Hi-Z
Hi-Z
Hi-Z
Da + 2
Da + 2
Da
Da + 1
Da + n
Data (n + 2)
RDY (n + 2)
Hi-Z
Hi-Z
Hi-Z
Da + 1
Da + 1
Da
Da
Da + n
Data (n + 3)
RDY (n + 3)
Hi-Z
Hi-Z
Hi-Z
Da
Da
t
CR
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S70WS512N00BAWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB0 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S70WS512N00BFWAA3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70Y | 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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