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參數(shù)資料
| 型號： | S70WS512N00BFWAA2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 56/93頁 |
| 文件大?。?/td> | 846K |
| 代理商： | S70WS512N00BFWAA2 |
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March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
57
A d v a n c e I n f o r m a t i o n
Figure 9.3 Lock Register Program Algorithm
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Write
Enter Lock Register Command:
Address 555h, Data 40h
Program Lock Register Data
Address XXXh, Data A0h
Address 77h*, Data PD
Unlock Cycle 1
Unlock Cycle 2
XXXh = Address don’t care
* Not on future devices
Program Data (PD): See text for Lock Register
definitions
Caution:
Lock register can only be progammed
once.
Wait 4
μ
s
PASS. Write Lock Register
Exit Command:
Address XXXh, Data 90h
Address XXXh, Data 00h
Device returns to reading array.
Perform Polling Algorithm
(see Write Operation Status
flowchart)
Yes
Yes
No
No
Done
DQ5 = 1
Error condition (Exceeded Timing Limits)
FAIL. Write rest command
to return to reading array.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S70WS512N00BAWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB0 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S70WS512N00BFWAA3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70Y | 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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