參數(shù)資料
型號： S70WS512N00BFWAA2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存
文件頁數(shù)： 8/93頁
文件大?。?/td> 846K
代理商： S70WS512N00BFWAA2
6
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Figures
Figure 8.1
Figure 8.2
Figure 8.3
Figure 8.4
Figure 8.5
Figure 8.6
Figure 9.1
Figure 9.2
Figure 9.3
Figure 12.1
Figure 12.2
Figure 12.3
Figure 12.4
Figure 12.5
Figure 12.6
Figure 12.7
Figure 12.8
Figure 12.9
Figure 12.10
Figure 12.11
Figure 12.12
Figure 12.13
Figure 12.14
Figure 12.15
Figure 12.16
Figure 12.17
Figure 12.18
Figure 12.19
Figure 12.20
Figure 12.21
Figure 12.22
Figure 12.23
Figure 12.24
Synchronous/Asynchronous State Diagram...........................................................................................23
Synchronous Read ............................................................................................................................26
Single Word Program.........................................................................................................................32
Write Buffer Programming Operation ...................................................................................................36
Sector Erase Operation ......................................................................................................................38
Write Operation Status Flowchart ........................................................................................................45
Advanced Sector Protection/Unprotection .............................................................................................51
PPB Program/Erase Algorithm .............................................................................................................54
Lock Register Program Algorithm.........................................................................................................57
Maximum Negative Overshoot Waveform .............................................................................................64
Maximum Positive Overshoot Waveform ...............................................................................................64
Test Setup .......................................................................................................................................65
Input Waveforms and Measurement Levels...........................................................................................65
V
CC
Power-up Diagram ......................................................................................................................66
CLK Characterization .........................................................................................................................68
CLK Synchronous Burst Mode Read......................................................................................................69
8-word Linear Burst with Wrap Around.................................................................................................70
8-word Linear Burst without Wrap Around ............................................................................................70
Linear Burst with RDY Set One Cycle Before Data ..................................................................................71
Asynchronous Mode Read...................................................................................................................72
Reset Timings...................................................................................................................................72
Chip/Sector Erase Operation Timings ...................................................................................................74
Asynchronous Program Operation Timings ............................................................................................75
Synchronous Program Operation Timings .............................................................................................76
Accelerated Unlock Bypass Programming Timing ...................................................................................76
Data# Polling Timings (During Embedded Algorithm) .............................................................................77
Toggle Bit Timings (During Embedded Algorithm) ..................................................................................77
Synchronous Data Polling Timings/Toggle Bit Timings ............................................................................78
DQ2 vs. DQ6 ....................................................................................................................................78
Latency with Boundary Crossing when Frequency > 66 MHz....................................................................79
Latency with Boundary Crossing into Program/Erase Bank ......................................................................80
Example of Wait State Insertion..........................................................................................................81
Back-to-Back Read/Write Cycle Timings ...............................................................................................82
相關(guān)PDF資料
PDF描述
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWAA3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70Y 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*