參數(shù)資料
型號： S70WS512N00BFWAA2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時讀/寫，突發(fā)模式閃存
文件頁數(shù)： 38/93頁
文件大?。?/td> 846K
代理商： S70WS512N00BFWAA2
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
39
A d v a n c e I n f o r m a t i o n
8.5.4
Chip Erase Command Sequence
Chip erase is a six-bus cycle operation as indicated by
Table 13.1
. These commands invoke the
Embedded Erase algorithm, which does not require the system to preprogram prior to erase. The
Embedded Erase algorithm automatically preprograms and verifies the entire memory for an all
zero data pattern prior to electrical erase. After a successful chip erase, all locations of the chip
contain FFFFh. The system is not required to provide any controls or timings during these oper-
ations.
Table 13.1
and
Table 13.2
in the appendix show the address and data requirements for
the chip erase command sequence.
When the Embedded Erase algorithm is complete, that bank returns to the read mode and ad-
dresses are no longer latched. The system can determine the status of the erase operation by
using DQ7 or DQ6/DQ2. See
Write Operation Status
for information on these status bits.
Any commands written during the chip erase operation are ignored. However, note that a hard-
ware reset immediately terminates the erase operation. If that occurs, the chip erase command
sequence should be reinitiated once that bank has returned to reading array data, to ensure data
integrity.
The following is a C source code example of using the chip erase function. Refer to the
Span-
sion Low Level Driver User’s Guide
(available on
www.amd.com
and
www.fujitsu.com
) for
general information on Spansion Flash memory software development guidelines.
/* Example: Chip Erase Command */
/* Note: Cannot be suspended */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x0080; /* write setup command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write additional unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write additional unlock cycle 2 */
*( (UINT16 *)base_addr + 0x000 ) = 0x0010; /* write chip erase command */
8.5.5
Erase Suspend/ Erase Resume Commands
When the Erase Suspend command is written during the sector erase time-out, the device imme-
diately terminates the time-out period and suspends the erase operation. The Erase Suspend
command allows the system to interrupt a sector erase operation and then read data from, or
program data to, any sector not selected for erasure. The bank address is required when writing
this command. This command is valid only during the sector erase operation, including the min-
imum t
SEA
time-out period during the sector erase command sequence. The Erase Suspend
command is ignored if written during the chip erase operation.
When the Erase Suspend command is written after the t
SEA
time-out period has expired and dur-
ing the sector erase operation, the device requires a maximum of t
ESL
(erase suspend latency) to
suspend the erase operation.
Software Functions and Sample Code
Table 8.15 Chip Erase
(LLD Function = lld_ ChipEraseCmd)
Cycle
Description
Operation
Byte Address
Word Address
Data
1
Unlock
Write
Base + AAAh
Base + 555h
00AAh
2
Unlock
Write
Base + 554h
Base + 2AAh
0055h
3
Setup Command
Write
Base + AAAh
Base + 555h
0080h
4
Unlock
Write
Base + AAAh
Base + 555h
00AAh
5
Unlock
Write
Base + 554h
Base + 2AAh
0055h
6
Chip Erase Command
Write
Base + AAAh
Base + 555h
0010h
相關(guān)PDF資料
PDF描述
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWAA3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70Y 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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