- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365431 > S70WS512N00BFWAA2 (Spansion Inc.) Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | S70WS512N00BFWAA2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 25/93頁 |
| 文件大小： | 846K |
| 代理商： | S70WS512N00BFWAA2 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁當(dāng)前第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁
26
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Figure 8.2 Synchronous Read
8.3.1
Continuous Burst Read Mode
In the continuous burst read mode, the device outputs sequential burst data from the starting
address given and then wrap around to address 000000h when it reaches the highest addressable
memory location. The burst read mode continues until the system drives CE# high, or RESET=
V
IL
. Continuous burst mode can also be aborted by asserting AVD# low and providing a new ad-
dress to the device.
If the address being read crosses a 128-word line boundary (as mentioned above) and the sub-
sequent word line is not being programmed or erased, additional latency cycles are required as
reflected by the configuration register table (
Table 8.8
).
If the address crosses a bank boundary while the subsequent bank is programming or erasing,
the device provides read status information and the clock is ignored. Upon completion of status
read or program or erase operation, the host can restart a burst read operation using a new ad-
dress and AVD# pulse.
Write Unlock Cycles:
Address 555h, Data AAh
Address 2AAh, Data 55h
Write Set Configuration Register
Command and Settings:
Address 555h, Data D0h
Address X00h, Data CR
Load Initial Address
Address = RA
Read Initial Data
RD = DQ[15:0]
Read Next Data
RD = DQ[15:0]
Wait t
+
Programmable Wait State Setting
Wait X Clocks:
Additional Latency Due to Starting
Address, Clock Frequency, and
Boundary Crossing
End of Data
Yes
Crossing
Boundary
No
Yes
Completed
Delay X Clocks
Unlock Cycle 1
Unlock Cycle 2
RA = Read Address
RD = Read Data
Command Cycle
CR = Configuration Register Bits CR15-CR0
CR13-CR11 sets initial access time
(from address latched to
valid data) from 2 to 7 clock cycles
Note: Setup Configuration Register parameters
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S70WS512N00BAWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB0 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S70WS512N00BFWAA3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70Y | 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。