- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365431 > S70WS512N00BFWAA2 (Spansion Inc.) Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory PDF資料下載
參數(shù)資料
| 型號(hào)： | S70WS512N00BFWAA2 |
| 廠商： | Spansion Inc. |
| 英文描述： | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| 中文描述： | 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存 |
| 文件頁數(shù)： | 23/93頁 |
| 文件大?。?/td> | 846K |
| 代理商： | S70WS512N00BFWAA2 |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁當(dāng)前第23頁第24頁第25頁第26頁第27頁第28頁第29頁第30頁第31頁第32頁第33頁第34頁第35頁第36頁第37頁第38頁第39頁第40頁第41頁第42頁第43頁第44頁第45頁第46頁第47頁第48頁第49頁第50頁第51頁第52頁第53頁第54頁第55頁第56頁第57頁第58頁第59頁第60頁第61頁第62頁第63頁第64頁第65頁第66頁第67頁第68頁第69頁第70頁第71頁第72頁第73頁第74頁第75頁第76頁第77頁第78頁第79頁第80頁第81頁第82頁第83頁第84頁第85頁第86頁第87頁第88頁第89頁第90頁第91頁第92頁第93頁
24
S70WS512N00 Based MCPs
S70WS512N00_00_A0 March 14, 2005
A d v a n c e I n f o r m a t i o n
Starting address: whether the address is divisible by four (where A[1:0] is 00). A divisible-
by-four address incurs the least number of additional wait states that occur after the initial
word. The number of additional wait states required increases for burst operations in which
the starting address is one, two, or three locations above the divisible-by-four address (i.e.,
where A[1:0] is 01, 10, or 11).
Boundary crossing: There is a boundary at every 128 words due to the internal architecture
of the device. One additional wait state must be inserted when crossing this boundary if the
memory bus is operating at a high clock frequency. Please refer to the tables below.
Clock frequency: the speed at which the device is expected to burst data. Higher speeds
require additional wait states after the initial word for proper operation.
In all cases, with or without latency, the RDY output indicates when the next data is available to
be read.
Tables
8.2
–
8.6
reflect wait states required for S29WS256/128/064N devices. Refer to the
Con-
figuration Register
table (CR11 – CR14) and timing diagrams for more details.
Table 8.2 Address Latency (S29WS256N)
Word
Wait States
Cycle
0
x ws
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
x ws
D1
D2
D3
1 ws
D4
D5
D6
D7
D8
2
x ws
D2
D3
1 ws
1 ws
D4
D5
D6
D7
D8
3
x ws
D3
1 ws
1 ws
1 ws
D4
D5
D6
D7
D8
Table 8.3 Address Latency (S29WS128N/S29WS064N)
Word
Wait States
Cycle
0
5, 6, 7 ws
D0
D1
D2
D3
D4
D5
D6
D7
D8
1
5, 6, 7 ws
D1
D2
D3
1 ws
D4
D5
D6
D7
D8
2
5, 6, 7 ws
D2
D3
1 ws
1 ws
D4
D5
D7
D8
3
5, 6, 7 ws
D3
1 ws
1 ws
1 ws
D4
D5
D6
D7
D8
Table 8.4 Address/Boundary Crossing Latency (S29WS256N @ 80/66 MHz)
Word
Wait States
Cycle
0
7, 6 ws
D0
D1
D2
D3
1 ws
D4
D5
D6
D7
1
7, 6 ws
D1
D2
D3
1 ws
1 ws
D4
D5
D6
D7
2
7, 6 ws
D2
D3
1 ws
1 ws
1 ws
D4
D5
D6
D7
3
7, 6 ws
D3
1 ws
1 ws
1 ws
1 ws
D4
D5
D6
D7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S70WS512N00BAWAA2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAA3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB0 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB2 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BAWAB3 | Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S70WS512N00BFWAA3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB0 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB2 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70WS512N00BFWAB3 | 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory |
| S70Y | 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。