參數(shù)資料
型號(hào)： S70WS512N00BFWAA2
廠商： Spansion Inc.
英文描述： Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
中文描述： 同硅晶片堆疊多芯片產(chǎn)品（MCP）的512兆位（32兆× 16位）的CMOS 1.8伏，只有同時(shí)讀/寫，突發(fā)模式閃存
文件頁(yè)數(shù)： 32/93頁(yè)
文件大?。?/td> 846K
代理商： S70WS512N00BFWAA2
March 14, 2005 S70WS512N00_00_A0
S70WS512N00 Based MCPs
33
A d v a n c e I n f o r m a t i o n
Note:
Base = Base Address.
The following is a C source code example of using the single word program function. Refer to
the
S pansion Low Level Driver User’s Guide
( available on
www.amd.com
and
www.fujitsu.com
) for general information on Spansion Flash memory software development
guidelines.
/* Example: Program Command */
*( (UINT16 *)base_addr + 0x555 ) = 0x00AA; /* write unlock cycle 1 */
*( (UINT16 *)base_addr + 0x2AA ) = 0x0055; /* write unlock cycle 2 */
*( (UINT16 *)base_addr + 0x555 ) = 0x00A0; /* write program setup command */
*( (UINT16 *)pa ) = data; /* write data to be programmed */
/* Poll for program completion */
8.5.2
W rite Buffer Programming
Write Buffer Programming allows the system to write a maximum of 32 words in one program-
ming operation. This results in a faster effective word programming time than the standard
word
programming algorithms. The Write Buffer Programming command sequence is initiated by first
writing two unlock cycles. This is followed by a third write cycle containing the Write Buffer Load
command written at the Sector Address in which programming occurs. At this point, the system
writes the number of
word locations minus 1
that are loaded into the page buffer at the Sector
Address in which programming occurs. This tells the device how many write buffer addresses are
loaded with data and therefore when to expect the
Program Buffer to Flash
confirm command.
The number of locations to program cannot exceed the size of the write buffer or the operation
aborts. (Number loaded = the number of locations to program minus
1
. For example, if the sys-
tem programs 6 address locations, then 05h should be written to the device.)
The system then writes the starting address/data combination. This starting address is the first
address/data pair to be programmed, and selects the
write-buffer-page
address. All subsequent
address/data pairs must fall within the elected-write-buffer-page.
The
write-buffer-page
is selected by using the addresses A
MAX
- A5.
The
write-buffer-page
addresses must be the same for all address/data pairs loaded into the write
buffer. (This means Write Buffer Programming cannot be performed across multiple
write-buffer-
pages
. This also means that Write Buffer Programming cannot be performed across multiple sec-
tors. If the system attempts to load programming data outside of the selected
write-buffer-page
,
the operation ABORTs.)
After writing the Starting Address/Data pair, the system then writes the remaining address/data
pairs into the write buffer.
Note that if a Write Buffer address location is loaded multiple times, the
address/data pair
counter
is decremented for every data load operation. Also, the last data loaded at a location before the
Program Buffer to Flash
confirm command is programmed into the device. It is the software's re-
sponsibility to comprehend ramifications of loading a write-buffer location more than once. The
Software Functions and Sample Code
Table 8.12 Single Word Program
(LLD Function = lld_ ProgramCmd)
Cycle
Operation
Byte Address
Word Address
Data
Unlock Cycle 1
Write
Base + AAAh
Base + 555h
00AAh
Unlock Cycle 2
Write
Base + 554h
Base + 2AAh
0055h
Program Setup
Write
Base + AAAh
Base + 555h
00A0h
Program
Write
Word Address
Word Address
Data Word
相關(guān)PDF資料
PDF描述
S70WS512N00BAWAA2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAA3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB0 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB2 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BAWAB3 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
S70WS512N00BFWAA3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB0 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB2 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70WS512N00BFWAB3 制造商:SPANSION 制造商全稱:SPANSION 功能描述:Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
S70Y 功能描述:整流器 1600V 70A Std. Recovery RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時(shí)間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel
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