參數(shù)資料
型號: NS32829
廠商: National Semiconductor Corporation
英文描述: 1 Megabit High Speed Dynamic RAM Controller/Drivers
中文描述: 1兆位動(dòng)態(tài)隨機(jī)存儲器的高速控制器/驅(qū)動(dòng)器
文件頁數(shù): 13/26頁
文件大?。?/td> 481K
代理商: NS32829
DP8428/DP8429 Mode Descriptions
(Continued)
*
Indicates Dynamic RAM Parameters
TL/F/8649–20
FIGURE 6. Mode 5 Timing
(Refer to Figure 6) In mode 5 the selected RAS follows
RASIN immediately, as in mode 4, to strobe the row address
into the DRAMs. The row address remains valid on the
DP8429 address outputs long enough to meet the t
RAH
re-
quirement of the DRAMs (pin 4, RAHS, of the DP8429 al-
lows the user two choices of t
RAH
). Next, the column ad-
dress replaces the row address on the address outputs and
CAS goes low to strobe the columns into the DRAMs. WIN
determines whether a read, write or read-modify-write is
done.
The diagram below illustrates mode 5 automatic control sig-
nal generation.
TL/F/8649–21
REFRESHING IN CONJUNCTION WITH MODE 5
When using mode 5 to perform memory accesses, refresh-
ing may be accomplished:
(a)
externally (in mode 0 or mode 1)
(b)
by a combination of mode 5 (hidden refresh) and
mode 1 (auto-refresh)
by a combination of mode 5 and mode 0
or
(c)
(a) Externally Controlled Refreshing in Mode 0 or Mode 1
All refreshing may be accomplished using external refresh-
es in either mode 0 or mode 1 with R/C (RFCK) tied high
(see mode 0 and mode 1 descriptions). If this is desired, the
system determines when a refresh will be performed, puts
the DP8429 in the appropriate mode, and controls the RAS
signals directly with RASIN. The on-chip refresh counter is
enabled to the address outputs of the DP8429 when the
refresh mode is entered, and increments when RASIN goes
high at the completion of the refresh.
(b)
Mode 5 Refreshing (hidden) with Mode 1 refreshing
(auto)
(Refer to Figure 7a) If RFCK is tied to a clock (see mode 1
description), RFI/O becomes a refresh request output and
goes low following RFCK going low if no refresh occurred
while RFCK was high. Refreshes may be performed in
mode 5 when the DP8429 is not selected for access (CS is
high) and RFCK is high. If these conditions exist the refresh
counter contents appear on the DP8429 address outputs
and all RAS lines follow RASIN so that if RASIN goes low
(an access other than through the DP8429 occurs), all RAS
lines go low to perform the refresh. The DP8429 allows only
one refresh of this type for each period of RFCK, since
RFCK should be fast enough such that one refresh per peri-
od is sufficient to meet the DRAM refresh requirement.
13
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