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參數(shù)資料
| 型號： | MT9VDDT1672A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DDR SDRAM DIMM |
| 中文描述： | DDR SDRAM的內(nèi)存 |
| 文件頁數(shù)： | 8/29頁 |
| 文件大?。?/td> | 542K |
| 代理商： | MT9VDDT1672A |
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128MB, 256MB (x72, ECC)
184-Pin DDR SDRAM DIMM
09005aef808f8ccd
DD9C16_32X72AG_B.fm - Rev. B 2/03 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
8
2003 Micron Technology. Inc.
General Description
The MT9VDDT1672A and MT9VDDT3272A are
high-speed CMOS, dynamic random-access, 128MB
and 256MB memory modules organized in a x72 (ECC)
configuration. These modules use internally config-
ured quad-bank DDR SDRAM devices.
These DDR SDRAM modules use a double data rate
architecture to achieve high-speed operation. The
double data rate architecture is essentially a 2
n
-
prefetch architecture with an interface designed to
transfer two data words per clock cycle at the I/O pins.
A single read or write access for the DDR SDRAM mod-
ule effectively consists of a single 2
n
-bit wide, one-
clock-cycle data transfer at the internal DRAM core
and two corresponding
n
-bit wide, one-half-clock-
cycle data transfers at the I/O pins.
A bidirectional data strobe (DQS) is transmitted
externally, along with data, for use in data capture at
the receiver. DQS is an intermittent strobe transmitted
by the DDR SDRAM during READs and by the memory
controller during WRITEs. DQS is edge-aligned with
data for READs and center-aligned with data for
WRITEs.
These DDR SDRAM modules operate from a differ-
ential clock (CK and CK#); the crossing of CK going
HIGH and CK# going LOW will be referred to as the
positive edge of CK. Commands (address and control
signals) are registered at every positive edge of CK.
Input data is registered on both edges of DQS, and out-
put data is referenced to both edges of DQS, as well as
to both edges of CK.
Read and write accesses to the DDR SDRAM mod-
ules are burst oriented; accesses start at a selected
location and continue for a programmed number of
locations in a programmed sequence. Accesses begin
with the registration of an ACTIVE command, which is
then followed by a READ or WRITE command. The
address bits registered coincident with the ACTIVE
command are used to select the device bank and row
to be accessed (BA0, BA1 select device bank; A0–A11
select device row for the 128MB module, A0–A12 select
device row for the 256MB module). The address bits
registered coincident with the READ or WRITE com-
mand are used to select the device bank and the start-
ing device column location for the burst access.
These DDR SDRAM modules provide for program-
mable READ or WRITE burst lengths of 2, 4, or 8 loca-
tions. An auto precharge function may be enabled to
provide a self-timed row precharge that is initiated at
the end of the burst access.
As with standard SDR SDRAM modules, the pipe-
lined, multibank architecture of DDR SDRAM modules
allows for concurrent operation, thereby providing
high effective bandwidth by hiding row precharge and
activation time.
An auto refresh mode is provided, along with a pow-
ersaving power-down mode. All inputs are compatible
with the JEDEC Standard for SSTL_2. All outputs are
SSTL_2, Class II compatible. For more information
regarding DDR SDRAM operation, refer to the 128Mb
and 256Mb DDR SDRAM component data sheet.
Serial Presence-Detect Operation
These DDR SDRAM modules incorporate serial
presence-detect (SPD). The SPD function is imple-
mented using a 2,048-bit EEPROM. This nonvolatile
storage device contains 256 bytes. The first 128 bytes
can be programmed by Micron to identify the module
type and various SDRAM organizations and timing
parameters. The remaining 128 bytes of storage are
available for use by the customer. System READ/
WRITE operations between the master (system logic)
and the slave EEPROM device (DIMM) occur via a
standard I
2
C bus using the DIMM’s SCL (clock) and
SDA (data) signals, together with SA (2:0), which pro-
vide eight unique DIMM/EEPROM addresses. Write
protect (WP) is tied to ground on the module, perma-
nently disabling hardware write protect.
Mode Register Definition
The mode register is used to define the specific
mode of operation of the DDR SDRAM. This definition
includes the selection of a burst length, a burst type, a
CAS latency and an operating mode, as shown in Fig-
ure 5, Mode Register Definition Diagram, on page 9.
The mode register is programmed via the MODE REG-
ISTER SET command (with BA0 = 0 and BA1 = 0) and
will retain the stored information until it is pro-
grammed again or the device loses power (except for
bit A8, which is self-clearing).
Reprogramming the mode register will not alter the
contents of the memory, provided it is performed cor-
rectly. The mode register must be loaded (reloaded)
when all device banks are idle and no bursts are in
progress, and the controller must wait the specified
time before initiating the subsequent operation. Vio-
lating either of these requirements will result in
unspecified operation.
Mode register bits A0–A2 specify the burst length,
A3 specifies the type of burst (sequential or inter-
leaved), A4–A6 specify the CAS latency, and A7–A11
(for the 128MB module) or A7–A12 (for the 256MB
module) specify the operating mode.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MT9VDDT1672AG-202A1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-265B1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-265D4 | 制造商:Micron Technology Inc 功能描述: |
| MT9VDDT1672AG-26AA1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-26AB1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
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