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| 型號(hào)： | MT9VDDT1672A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DDR SDRAM DIMM |
| 中文描述： | DDR SDRAM的內(nèi)存 |
| 文件頁(yè)數(shù)： | 17/29頁(yè) |
| 文件大小： | 542K |
| 代理商： | MT9VDDT1672A |
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128MB, 256MB (x72, ECC)
184-Pin DDR SDRAM DIMM
09005aef808f8ccd
DD9C16_32X72AG_B.fm - Rev. B 2/03 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
17
2003 Micron Technology. Inc.
ACTIVE to PRECHARGE command
t
RAS
t
RAP
42
70,000
40
120,000
40
120,000
ns
31
ACTIVE to READ with Auto precharge
command
128MB
t
RAS(MIN) -
(burst length) *
t
CK/2)
t
RAS(MIN) -
(burst length) *
t
CK/2)
65
ns
40
ACTIVE to READ with Auto precharge
command
256MB
t
RAP
18
ns
ACTIVE to ACTIVE/AUTO REFRESH command period
t
RC
t
RFC
t
RCD
t
RP
t
RPRE
t
RPST
t
RRD
t
WPRE
t
WPRES
t
WPST
t
WR
t
WTR
na
60
70
ns
AUTO REFRESH command period
72
75
80
ns
45
ACTIVE to READ or WRITE delay
18
20
20
ns
PRECHARGE command period
18
20
20
ns
DQS read preamble
0.9
1.1
0.9
1.1
0.9
1.1
t
CK
t
CK
ns
37
DQS read postamble
0.4
0.6
0.4
0.6
0.4
0.6
ACTIVE bank
a
to ACTIVE bank
b
command
12
15
15
DQS write preamble
0.25
0.25
0.25
t
CK
ns
DQS write preamble setup time
0
0
0
18, 19
DQS write postamble
0.4
0.6
0.4
0.6
0.4
0.6
t
CK
ns
17
Write recovery time
15
15
15
Internal WRITE to READ command delay
1
1
1
t
CK
ns
Data valid output window
t
QH -
t
DQSQ
t
QH -
t
DQSQ
t
QH -
t
DQSQ
22
REFRESH to REFRESH command interval
128MB
t
REFC
t
REFC
t
REFI
t
REFI
t
VTD
t
XSNR
t
XSRD
140.6
140.6
140.6
μs
21
REFRESH to REFRESH command interval
256MB
70.3
140.6
140.6
μs
21
Average periodic refresh interval
128MB
15.6
15.6
15.6
μs
21
Average periodic refresh interval
256MB
7.8
7.8
μs
21
Terminating voltage delay to V
DD
0
0
ns
Exit SELF REFRESH to non-READ command
75
75
ns
Exit SELF REFRESH to READ command
200
200
t
CK
Table 15: Electrical Characteristics and Recommended AC Operating Conditions
(Continued)
AC CHARACTERISTICS
-335
-26A/265
-202
UNITS NOTES
PARAMETER
SYMBOL
MIN
MAX
MIN
MAX
MIN
MAX
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| MT9VDDT1672AG-202A1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-265B1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-265D4 | 制造商:Micron Technology Inc 功能描述: |
| MT9VDDT1672AG-26AA1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-26AB1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
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