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| 型號(hào)： | MT9VDDT1672A |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | DDR SDRAM DIMM |
| 中文描述： | DDR SDRAM的內(nèi)存 |
| 文件頁(yè)數(shù)： | 25/29頁(yè) |
| 文件大?。?/td> | 542K |
| 代理商： | MT9VDDT1672A |
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128MB, 256MB (x72, ECC)
184-Pin DDR SDRAM DIMM
09005aef808f8ccd
DD9C16_32X72AG_B.fm - Rev. B 2/03 EN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
25
2003 Micron Technology. Inc.
Table 20: Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes at end of SPD Matrix
BYTE
0
1
2
3
4
5
6
7
8
9
DESCRIPTION
ENTRY (VERSION)
128
256
SDRAM DDR
12 or 13
10
1
72
0
SSTL 2.5V
6ns (-335)
7ns (-262/-26A)
7.5ns (-265)
8ns (-202)
0.7ns (-335)
0.75ns (-262/-265/-26A)
0.8ns (-202)
ECC
15.6 or 7.81μs/SELF
8
8
1
MT9VDDT1672A
80
08
07
0C
0A
01
48
00
04
60
70
75
80
70
75
80
02
80
08
08
01
MT9VDDT3272A
80
08
07
0D
0A
01
48
00
04
60
70
75
80
70
75
80
02
82
08
08
01
Number of Bytes Used by Micron
Total Number of SPD Memory Bytes
Memory Type
Number of Row Addresses
Number of Column Addresses
Number of Ranks
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
t
CK, (CAS Latency = 2.5)
(See note 1)
10
SDRAM Access From Clock,
t
AC
(CAS Latency = 2.5)
11
12
13
14
15
Module Configuration Type
Refresh Rate/Type
SDRAM Width (Primary SDRAM)
Error-Checking SDRAM Data Width
Minimum Clock Delay, Back -to- Back
Random Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
16
17
18
19
20
21
22
2, 4, 8
4
2, 2.5
0
1
0E
04
0C
01
02
20
0E
04
0C
01
02
20
C0
Unbuffered, Diff CLK
Fast/concurrent auto
precharge
7.5ns (-335/-262/-26A)
10ns (-202/-265)
0.7ns (-335)
0.75ns (-262/-265/-26A)
0.8ns (-202)
–
00/C0
(See note 2)
75
A0
70
75
80
00
23
SDRAM Cycle Time,
t
CK (CAS Latency = 2)
75
A0
70
75
80
00
24
SDRAM Cycle Time,
t
CK (CAS Latency = 2)
(See note 1)
25
SDRAM Cycle Time,
t
CK (CAS Latency = 1)
SDRAM Access From CK , (CAS latency = 1)
Minimum Row Precharge Time,
t
RP
26
27
–
00
48
3C
50
30
3C
48
3C
50
00
48
3C
50
30
3C
48
3C
50
18ns (-335)
20ns (-262)
20ns (-202/-265/-26A)
12ns (-335)
15ns (-202/-265/-26A)/-262
18ns (-335)
20ns (-262)
20ns (-202/-265/-26A)
28
Minimum Row Active To Row Active,
t
RRD
29
Minimum RAS# to CAS# Delay,
t
RCD
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| MT9VDDT1672AG-202A1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-265B1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-265D4 | 制造商:Micron Technology Inc 功能描述: |
| MT9VDDT1672AG-26AA1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
| MT9VDDT1672AG-26AB1 | 制造商:Micron Technology Inc 功能描述:DRAM MOD DDR SDRAM 1.125GBIT 184UDIMM - Trays |
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