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參數(shù)資料
| 型號： | MTD20N06HDLT4 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| 中文描述： | 20 A, 60 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369C-01, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 235K |
| 代理商： | MTD20N06HDLT4 |
Semiconductor Components Industries, LLC, 2006
August, 2006
Rev. 6
1
Publication Order Number:
MTD20N06HDL/D
MTD20N06HDL
Preferred Device
Power MOSFET
20 Amps, 60 Volts, Logic Level
N
Channel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain
to
source diode with a fast
recovery time. Designed for low
voltage, high
speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits, and
inductive loads. The avalanche energy capability is specified to
eliminate the guesswork in designs where inductive loads are
switched, and to offer additional safety margin against unexpected
voltage transients.
Features
Avalanche Energy Specified
Source
to
Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
Pb
Free Package is Available
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain
Source Voltage
V
DSS
60
Vdc
Drain
Gate Voltage (R
GS
= 1.0 M )
V
DGR
60
Vdc
Gate
Source Voltage
Continuous
Non
Repetitive (t
p
≤
10 ms)
V
GS
V
GSM
±
15
±
20
Vdc
Vpk
Drain Current
Continuous @ 25
°
C
Drain Current
Continuous @ 100
°
C
Drain Current
Single Pulse (t
p
≤
10 s)
I
D
I
D
I
DM
20
12
60
Adc
Apk
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ T
C
= 25
°
C (Note 1)
P
D
40
0.32
1.75
W
W/
°
C
W
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Single Pulse Drain
to
Source Avalanche
Energy
Starting T
J
= 25
°
C
(V
DD
= 25 Vdc, V
GS
= 5.0 Vdc,
I
L
= 20 Apk, L = 1.0 mH, R
G
= 25 )
E
AS
200
mJ
Thermal Resistance
Junction
to
Case
Junction
to
Ambient (Note 1)
Junction
to
Ambient (Note 2)
R
JC
R
JA
R
JA
3.13
100
71.4
°
C/W
Maximum Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR
4 board using the minimum recommended
pad size.
2. When surface mounted to an FR
4 board using the 0.5 sq.in. drain pad size.
20 AMPERES, 60 VOLTS
R
DS(on)
= 45 m
Device
Package
Shipping
ORDERING INFORMATION
MTD20N06HDL
DPAK
75 Units/Rail
N
Channel
D
S
G
MTD20N06HDLT4
DPAK
2500 Tape & Reel
Preferred
devices are recommended choices for future use
and best overall value.
http://onsemi.com
MTD20N06HDLT4G
DPAK
(Pb
Free)
2500 Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MARKING DIAGRAM & PIN ASSIGNMENTS
Y
WW
20N06HL = Device Code
G
= Pb
Free Package
= Year
= Work Week
Gate 1
4
Drain
DPAK
CASE 369C
STYLE 2
1 2
3
4
YWW
06HLG
Drain 2
Source 3
20N
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MTD20N06HDLT4G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 20 Amps, 60 Volts, Logic Level N−Channel DPAK |
| MTD20N06HDT4 | 制造商:ON Semiconductor 功能描述:Trans MOSFET N-CH 60V 20A 3-Pin(2+Tab) DPAK T/R |
| MTD20N06V | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.080 OHM |
| MTD20N06VT4 | 功能描述:MOSFET 60V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| MTD20P03 | 制造商:MOTOROLA 制造商全稱:Motorola, Inc 功能描述:TMOS POWER FET LOGIC LEVEL 19 AMPERES 30 VOLTS RDS(on) = 0.099 OHM |
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