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參數(shù)資料
| 型號： | MTD6N20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 6 Amps, 200 Volts(6A, 200V功率MOSFET) |
| 中文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 84K |
| 代理商： | MTD6N20E |
Semiconductor Components Industries, LLC, 2005
August, 2005 Rev. 3
1
Publication Order Number:
MTD6N20E/D
MTD6N20E
Preferred Device
Power MOSFET
6 Amps, 200 Volts
NChannel DPAK
This advanced Power MOSFET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a draintosource diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor controls,
these devices are particularly well suited for bridge circuits where
diode speed and commutating safe operating areas are critical and
offer additional safety margin against unexpected voltage transients.
Features
Avalanche Energy Specified
SourcetoDrain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
Diode is Characterized for Use in Bridge Circuits
I
DSS
and V
DS(on)
Specified at Elevated Temperature
PbFree Package is Available*
MAXIMUM RATINGS
(T
C
= 25
°
C unless otherwise noted)
Rating
DraintoSource Voltage
DraintoGate Voltage (R
GS
= 1.0 M )
GatetoSource Voltage
Continuous
Nonrepetitive (t
p
≤
10 ms)
Drain Current
Continuous
Continuous @ 100
°
C
Single Pulse (t
p
≤
10 s)
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ T
A
= 25
°
C (Note 2)
Operating and Storage Temperature Range
Symbol
V
DSS
V
DGR
Value
200
200
Unit
Vdc
Vdc
V
GS
V
GSM
±
20
±
40
Vdc
Vpk
I
D
I
D
I
DM
6.0
3.8
18
Adc
Apk
P
D
50
0.4
1.75
W
W/
°
C
W
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 80 Vdc, V
GS
= 10 Vdc,
I
L
= 6.0 Apk, L = 3.0 mH, R
G
= 25 )
Thermal Resistance JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
Maximum Temperature for Soldering
Purposes, 1/8
″
from case for 10 secs
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using the 0.5 sq. in. drain pad size.
*For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting
Techniques Reference Manual, SOLDERRM/D.
E
AS
54
mJ
R
JC
R
JA
R
JA
2.50
100
71.4
°
C/W
T
L
260
°
C
http://onsemi.com
6 AMPERES, 200 VOLTS
R
DS(on)
= 460 m
NChannel
D
S
G
Preferred
devices are recommended choices for future use
and best overall value.
1
Gate
3
Source
2
Drain
4 Drain
DPAK
CASE 369C
STYLE 2
MARKING
DIAGRAMS
6N20E Device Code
Y
= Year
WW
= Work Week
G
= PbFree Package
Y
6
N
1 2
3
4
Y
6
N
1
Gate
3
Source
2
Drain
4 Drain
DPAK
CASE 369D
STYLE 2
123
4
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
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