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參數(shù)資料
| 型號： | MTD6N20E |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Power MOSFET 6 Amps, 200 Volts(6A, 200V功率MOSFET) |
| 中文描述： | 6 A, 200 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 84K |
| 代理商： | MTD6N20E |
MTD6N20E
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 0.25 Adc)
Temperature Coefficient (Positive)
V
(BR)DSS
200
689
Vdc
mV/
°
C
Zero Gate Voltage Drain Current
(V
DS
= 200 Vdc, V
GS
= 0 Vdc)
(V
DS
= 200 Vdc, V
GS
= 0 Vdc, T
J
= 125
C)
I
DSS
10
100
Adc
GateBody Leakage Current (V
GS
=
±
20 Vdc, V
DS
= 0)
I
GSS
100
nAdc
ON CHARACTERISTICS
(Note 3)
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250 Adc)
Temperature Coefficient (Negative)
V
GS(th)
2.0
3.0
7.1
4.0
Vdc
mV/
°
C
Static DrainSource OnResistance (V
GS
= 10 Vdc, I
D
= 3.0 Adc)
R
DS(on)
0.46
0.700
Ohm
DrainSource OnVoltage (V
GS
= 10 Vdc)
(I
D
= 6.0 Adc)
(I
D
= 3.0 Adc, T
J
= 125
°
C)
V
DS(on)
2.9
5.0
4.4
Vdc
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 3.0 Adc)
g
FS
1.5
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
342
480
pF
Output Capacitance
C
oss
92
130
Reverse Transfer Capacitance
C
rss
27
55
SWITCHING CHARACTERISTICS
(Note 4)
TurnOn Delay Time
(V
DD
= 100 Vdc, I
D
= 6.0 Adc,
V
GS
= 10 Vdc,
R
G
= 9.1 )
t
d(on)
8.8
17.6
ns
Rise Time
t
r
29
58
TurnOff Delay Time
t
d(off)
22
44
Fall Time
t
f
20
40.8
Gate Charge
(See Figure 8)
(V
DS
= 160 Vdc, I
= 6.0 Adc,
V
GS
= 10 Vdc)
Q
T
13.7
21
nC
Q
1
2.7
Q
2
7.1
Q
3
5.9
SOURCEDRAIN DIODE CHARACTERISTICS
Forward OnVoltage (Note 3)
(I
S
= 6.0 Adc, V
GS
= 0 Vdc)
(I
S
= 6.0 Adc, V
GS
= 0 Vdc,
T
J
= 125
°
C)
V
SD
0.99
0.9
1.2
Vdc
Reverse Recovery Time
(See Figure 14)
(I
S
= 6.0 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ s)
t
rr
138
ns
t
a
93
t
b
45
Reverse Recovery Stored Charge
Q
RR
0.74
C
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from the drain lead 0.25
″
from package to center of die)
L
D
4.5
nH
Internal Source Inductance
(Measured from the source lead 0.25
″
from package to source bond pad)
L
S
7.5
nH
3. Pulse Test: Pulse Width
≤
300 s, Duty Cycle
≤
2%.
4. Switching characteristics are independent of operating junction temperature.
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