參數(shù)資料
型號(hào)： MT48V2M32LFFC
廠商： Micron Technology, Inc.
英文描述： 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4組同步動(dòng)態(tài)RAM)
中文描述： 為512k × 32 × 4銀行2.5V的內(nèi)存電壓（2.5V，512K采樣× 32 × 4組同步動(dòng)態(tài)RAM）的
文件頁(yè)數(shù)： 9/50頁(yè)
文件大?。?/td> 1058K
代理商： MT48V2M32LFFC
9
64Mb: x32 SDRAM, 2.5V
BatRam_25V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 2.5V
SDRAM
PRELIMINARY
TRUTH TABLE 1 – COMMANDS AND DQM OPERATION
(Notes: 1)
NAME (FUNCTION)
COMMAND INHIBIT (NOP)
NO OPERATION (NOP)
ACTIVE (Select bank and activate row)
READ (Select bank and column, and start READ burst)
WRITE (Select bank and column, and start WRITE burst) L
BURST TERMINATE
PRECHARGE (Deactivate row in bank or banks)
AUTO REFRESH or SELF REFRESH
(Enter self refresh mode)
LOAD MODE REGISTER
Write Enable/Output Enable
Write Inhibit/Output High-Z
CS# RA S#CA S# WE# DQM
H
X
X
L
H
H
L
L
H
L
H
L
H
L
L
H
H
L
L
H
L
L
L
A DDR
X
X
Bank/Row
Bank/Col
Bank/Col
X
Code
X
DQs NOTES
X
X
X
X
Valid
Active
X
X
X
H
H
H
L
L
L
H
X
X
X
X
X
X
X
X
3
4
4
5
6, 7
L
–
–
L
–
–
L
–
–
L
–
–
X
L
H
Op-Code
–
–
X
2
8
8
Active
High-Z
appear following the Operation section; these tables
provide current state/next state information.
COMMANDS
Truth Table 1 provides a quick reference of avail-
able commands. This is followed by a written descrip-
tion of each command. Two additional Truth Tables
NOTE:
1. CKE is HIGH for all commands shown except SELF REFRESH.
2. A0–A10 define the op-code written to the Mode Register.
3. A0–A10 provide row address, BA0 and BA1 determine which bank is made active.
4. A0–A7 provide column address; A10 HIGH enables the auto precharge feature (nonpersistent), while A10 LOW disables
the auto precharge feature; BA0 and BA1 determine which bank is being read from or written to.
5. A10 LOW: BA0 and BA1 determine the bank being precharged. A10 HIGH: All banks precharged and BA or BA0 and BA1
are “ Don’t Care.”
6. This command is AUTO REFRESH if CKE is HIGH; SELF REFRESH if CKE is LOW.
7. Internal refresh counter controls row addressing; all inputs and I/Os are “ Don’t Care” except for CKE.
8. Activates or deactivates the DQs during WRITEs (zero-clock delay) and READs (two-clock delay). DQM0 controls DQ0–7,
DQM1 controls DQ8–15, DQM2 controls DQ16–23, and DQM3 controls DQ24–31.
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