參數(shù)資料
型號： MT48V2M32LFFC
廠商： Micron Technology, Inc.
英文描述： 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4組同步動(dòng)態(tài)RAM)
中文描述： 為512k × 32 × 4銀行2.5V的內(nèi)存電壓（2.5V，512K采樣× 32 × 4組同步動(dòng)態(tài)RAM）的
文件頁數(shù)： 26/50頁
文件大?。?/td> 1058K
代理商： MT48V2M32LFFC
26
64Mb: x32 SDRAM, 2.5V
BatRam_25V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 2.5V
SDRAM
PRELIMINARY
TRUTH TABLE 3 – CURRENT STATE BANK
n
- COMMAND TO BANK
n
(Notes: 1-6; notes appear below and on next page)
CURRENT STATE
Any
CS# RAS# CAS# WE#
H
X
L
H
L
L
L
L
L
L
L
L
L
H
L
H
L
L
L
H
L
H
L
L
L
H
L
H
L
H
L
L
L
H
COMMAND (ACTION)
COMMAND INHIBIT (NOP/Continue previous operation)
NO OPERATION (NOP/Continue previous operation)
ACTIVE (Select and activate row)
AUTO REFRESH
LOAD MODE REGISTER
PRECHARGE
READ (Select column and start READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE (Deactivate row in bank or banks)
READ (Select column and start new READ burst)
WRITE (Select column and start WRITE burst)
PRECHARGE (Truncate READ burst, start PRECHARGE)
BURST TERMINATE
READ (Select column and start READ burst)
WRITE (Select column and start new WRITE burst)
PRECHARGE (Truncate WRITE burst, start PRECHARGE)
BURST TERMINATE
NOTES
X
H
H
L
L
H
L
L
H
L
L
H
H
L
L
H
H
X
H
H
H
L
L
H
L
L
H
L
L
L
H
L
L
L
Idle
7
7
11
10
10
8
10
10
8
9
10
10
8
9
Row Active
Read
(Auto-
Precharge
Disabled)
Write
(Auto-
Precharge
Disabled)
NOTE:
1. This table applies when CKE
n-1
was HIGH and CKE
n
is HIGH (see Truth Table 2) and after
t
XSR has been
met (if the previous state was self refresh).
2. This table is bank-specific, except where noted, i.e., the current state is for a specific bank and the commands shown
are those allowed to be issued to that bank when in that state. Exceptions are covered in the notes below.
3. Current state definitions:
Idle: The bank has been precharged, and
t
RP has been met.
Row Active: A row in the bank has been activated, and
t
RCD has been met. No data bursts/accesses and no
register accesses are in progress.
Read: A READ burst has been initiated, with auto precharge disabled, and has not yet terminated or
been terminated.
Write: A WRITE burst has been initiated, with auto precharge disabled, and has not yet terminated or
been terminated.
4. The following states must not be interrupted by a command issued to the same bank. COMMAND INHIBIT or NOP
commands, or allowable commands to the other bank should be issued on any clock edge occurring during these states.
Allowable commands to the other bank are determined by its current state and Truth Table 3, and according to Truth
Table 4.
Precharging: Starts with registration of a PRECHARGE command and ends when
t
RP is met. Once
t
RP is met,
the bank will be in the idle state.
Row Activating: Starts with registration of an ACTIVE command and ends when
t
RCD is met. Once
t
RCD is met,
the bank will be in the row active state.
Read w/Auto-
Precharge Enabled: Starts with registration of a READ command with auto precharge enabled and ends when
t
RP has
been met. Once
t
RP is met, the bank will be in the idle state.
Write w/Auto-
Precharge Enabled: Starts with registration of a WRITE command with auto precharge enabled and ends when
t
RP
has been met. Once
t
RP is met, the bank will be in the idle state.
相關(guān)PDF資料
PDF描述
MT48V4M32LFFC SYNCHRONOUS DRAM
MT49H16M16 THERMISTOR PTC 100OHM 110DEG RAD
MT49H16M16FM REDUCED LATENCY DRAM RLDRAM
MT49H8M32 THERMISTOR PTC 100OHM 120DEG RAD
MT49H8M32FM REDUCED LATENCY DRAM RLDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT48V32M16S2FG-10 制造商:Micron Technology Inc 功能描述:32MX16 SSDRAM PLASTIC 2BOC 2.5V - Trays
MT48V32M16S2FG-8 ES 制造商:Micron Technology Inc 功能描述:DRAM CHIP MOBILE SDRAM 512MBIT 2.5V 54FBGA - Bulk
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進(jìn)入我的后臺，查看報(bào)價(jià)

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*