參數(shù)資料
型號(hào): MT48V2M32LFFC
廠商: Micron Technology, Inc.
英文描述: 512K x 32 x 4 banks 2.5V SDRAM(2.5V,512K x 32 x 4組同步動(dòng)態(tài)RAM)
中文描述: 為512k × 32 × 4銀行2.5V的內(nèi)存電壓(2.5V,512K采樣× 32 × 4組同步動(dòng)態(tài)RAM)的
文件頁(yè)數(shù): 45/50頁(yè)
文件大?。?/td> 1058K
代理商: MT48V2M32LFFC
45
64Mb: x32 SDRAM, 2.5V
BatRam_25V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 2.5V
SDRAM
PRELIMINARY
WRITE – WITHOUT AUTO PRECHARGE
1
NOTE:
1. For this example, the burst length = 4, and the WRITE burst is followed by a “ manual” PRECHARGE.
2. Faster frequencies require two clocks (
t
WR >
t
CK).
3. A8 and A9 = “ Don’t Care”
*CAS latency indicated in parentheses.
-8
-10
SYMBOL*
t
CMH
t
CMS
t
DH
t
DS
t
RAS
t
RC
t
RCD
t
RP
t
WR
MIN
1
2.5
1
2.5
48
68
20
20
15
MAX
MIN
1
2.5
1
2.5
50
70
20
20
15
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
120,000
120,000
TIMING PARAMETERS
-8
-10
SY MBOL*
t
AH
t
AS
t
CH
t
CL
t
CK (3)
t
CK (2)
t
CK (1)
t
CKH
t
CKS
MIN
1
2.5
3
3
8
13
25
1
2.5
MAX
MIN
1
2.5
3
3
10
13
25
1
2.5
MAX
UNITS
ns
ns
ns
ns
ns
ns
ns
ns
ns
DISABLE AUTO PRECHARGE
ALL BANKs
tCH
tCL
tCK
tRP
tRAS
tRC
tRCD
CKE
CLK
DQ
A10
tCMH
tCMS
tAH
tAS
ROW
ROW
BANK
BANK
BANK
ROW
ROW
BANK
tWR
DON’T CARE
UNDEFINED
D
IN
m
tDH
tDS
D
IN
m
+ 1
D
IN
m
+ 2
D
IN
m
+ 3
COMMAND
tCMH
tCMS
NOP
NOP
NOP
ACTIVE
NOP
WRITE
NOP
PRECHARGE
ACTIVE
tAH
tAS
tAH
tAS
tDH
tDS
tDH
tDS
tDH
tDS
SINGLE BANK
tCKH
tCKS
COLUMN
m
3
2
T0
T1
T2
T4
T3
T5
T6
T7
T8
DQM 0-3
BA0, BA1
A0-A9
相關(guān)PDF資料
PDF描述
MT48V4M32LFFC SYNCHRONOUS DRAM
MT49H16M16 THERMISTOR PTC 100OHM 110DEG RAD
MT49H16M16FM REDUCED LATENCY DRAM RLDRAM
MT49H8M32 THERMISTOR PTC 100OHM 120DEG RAD
MT49H8M32FM REDUCED LATENCY DRAM RLDRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MT48V32M16S2FG-10 制造商:Micron Technology Inc 功能描述:32MX16 SSDRAM PLASTIC 2BOC 2.5V - Trays
MT48V32M16S2FG-8 ES 制造商:Micron Technology Inc 功能描述:DRAM CHIP MOBILE SDRAM 512MBIT 2.5V 54FBGA - Bulk