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| 型號(hào)： | MT48V4M32LFFC |
| 廠商： | Micron Technology, Inc. |
| 英文描述： | SYNCHRONOUS DRAM |
| 中文描述： | 同步DRAM |
| 文件頁(yè)數(shù)： | 1/61頁(yè) |
| 文件大?。?/td> | 1400K |
| 代理商： | MT48V4M32LFFC |
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128Mb: x16, x32 Mobile SDRAM
MobileY95W_3V_F.p65 – Rev. F; Pub. 9/02
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2002, Micron Technology, Inc.
128Mb: x16, x32
MOBILE SDRAM
ADVANCE
PRODUCTS AND SPECIFICATIONS DISCUSSED HEREIN ARE FOR EVALUATION AND REFERENCE PUROPOSES ONLY AND ARE SUBJECT TO CHANGE BY
MICRON WITHOUT NOTICE. PRODUCTS ARE ONLY WARRANTED BY MICRON TO MEET MICRON'S PRODUCTION AND DATA SHEET SPECIFICATIONS.
8 Meg x 16
2 Meg x 16 x 4 banks 1 Meg x 32 x 4 banks
4K
4K (A0–A11)
4 (BA0, BA1)
512 (A0–A8)
4 Meg x 32
Configuration
Refresh Count
Row Addressing
Bank Addressing
Column Addressing
4K
4K (A0–A11)
4 (BA0, BA1)
256 (A0–A7)
SYNCHRONOUS
DRAM
MT48LC8M16LFFF, MT48V8M16LFFF – 2 Meg x 16 x 4 banks
MT48LC4M32LFFC , MT48V4M32LFFC – 1 Meg x 32 x 4 banks
For the latest data sheet revisions, please refer to the Micron Web
www.micron.com/dramds相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MT49H16M16 | THERMISTOR PTC 100OHM 110DEG RAD |
| MT49H16M16FM | REDUCED LATENCY DRAM RLDRAM |
| MT49H8M32 | THERMISTOR PTC 100OHM 120DEG RAD |
| MT49H8M32FM | REDUCED LATENCY DRAM RLDRAM |
| MT4C1M16E5DJ-6 | EDO DRAM |
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參數(shù)描述 |
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