
30
64Mb: x32 SDRAM, 2.5V
BatRam_25V.p65 – Rev. 0.7, Pub. 2/01
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2001, Micron Technology, Inc.
64Mb: x32, 2.5V
SDRAM
PRELIMINARY
ABSOLUTE MAXIMUM RATINGS*
Voltage on V
DD
, V
DD
Q Supply
Relative to V
SS
............................................. -0.5V to +3.6V
Voltage on Inputs, NC or I/O Pins
Relative to V
SS
............................................. -0.5V to +3.6V
Operating Temperature, T
A......................................
0oC to +70oC
Storage Temperature (plastic) ........... -55oC to +150oC
Power Dissipation ........................................................ 1W
*Stresses greater than those listed under “Absolute
Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only, and functional
operation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may
affect reliability.
DC ELECTRICAL CHARACTERISTICS AND OPERATING CONDITIONS
(Notes: 1, 6;notes appear on page 34) V
DD
= 2.5V ±0.2V, V
DD
Q = +2.5V/1.8V ±0.15V
PARAMETER/CONDITION
SUPPLY VOLTAGE
SUPPLY VOLTAGE
CMD/ADD INPUT HIGH VOLTAGE: Logic 1; All inputs
CMD/ADD INPUT LOW VOLTAGE: Logic 0; All inputs
DATA INPUT HIGH VOLTAGE: Logic 1; All inputs
DATA INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
£
V
IN
£
V
DD
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQs are disabled; 0V
£
V
OUT
£
V
DD
Q
OUTPUT LEVELS:
Output High Voltage (I
OUT
= -2mA)
Output Low Voltage (I
OUT
= 2mA)
SYMBOL
V
DD
V
DD
Q
V
IH
V
IL
V
IH
V
IL
MIN
2.3
2.3/1.65
0.65 * V
DD
-0.3
0.8 * V
DD
Q V
DD
Q + 0.3
-0.3
MAX
2.7
2.7/1.95
V
DD
+ 0.3
0.3
UNITS NOTES
V
V
V
V
V
V
23
23
23
23
0.3
I
I
-2
2
μA
I
OZ
V
OH
-5
5
–
μA
V
V
DD
Q - 0.45
V
OL
–
0.45
V