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| 型號： | MT48H8M16LFB4-8IT:JTR |
| 元件分類： | DRAM |
| 英文描述： | 8M X 16 SYNCHRONOUS DRAM, 6 ns, PBGA54 |
| 封裝： | 8 X 8 MM, LEAD FREE, VFBGA-54 |
| 文件頁數(shù)： | 31/61頁 |
| 文件大?。?/td> | 2469K |
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PDF: 09005aef8237e877/Source: 09005aef8237e8d8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
128Mb_x16 Mobile SDRAM_Y25M_2.fm - Rev. A 6/06 EN
37
2006 Micron Technology, Inc. All rights reserved.
128Mb: x16 Mobile SDRAM
Power-Down
Preliminary
Notes:
1. This table applies when CKEn-1 was HIGH and CKEn is HIGH (see Truth Table 2) and after
tXSR has been met (if the previous state was self refresh).
2. This table describes alternate bank operation, except where noted; i.e., the current state is
for bank n and the commands shown are those allowed to be issued to bank m (assuming
that bank m is in such a state that the given command is allowable). Exceptions are covered
in the notes below.
3. Current state definitions:
Idle:
The bank has been precharged, and tRP has been met.
Row Active: A row in the bank has been activated, and tRCD has been met. No data
bursts/accesses and no register accesses are in progress.
Read:
A READ burst has been initiated, with auto precharge disabled, and has not
yet terminated or been terminated.
Write:
A WRITE burst has been initiated, with auto precharge disabled, and has not
yet terminated or been terminated.
Read w/Auto Precharge Enabled: Starts with registration of a READ command with auto
precharge enabled, and ends when tRP has been met. Once tRP is met, the
bank will be in the idle state.
Write w/Auto Precharge Enabled: Starts with registration of a WRITE command with auto
precharge enabled, and ends when tRP has been met. Once tRP is met, the
bank will be in the idle state.
4. AUTO REFRESH, SELF REFRESH, and LOAD MODE REGISTER commands may only be issued
when all banks are idle.
5. A BURST TERMINATE command cannot be issued to another bank; it applies to the bank
represented by the current state only.
6. All states and sequences not shown are illegal or reserved.
Table 9:
Truth Table 4 – Current State Bank n, Command to Bank m
Notes: 1-6; notes appear below and on next page.
Current State
CS#
RAS#
CAS#
WE#
Command (Action)
Notes
Any
H
XXX
COMMAND INHIBIT (NOP/Continue previous operation)
L
HHH
NO OPERATION (NOP/Continue previous operation)
Idle
XXXX
Any command allowed to bank m
Row
Activating,
Active, or
Precharging
LL
H
ACTIVE (Select and activate row)
LH
READ (Select column and start READ burst)
7
LH
L
WRITE (Select column and start WRITE burst)
7
LL
H
L
PRECHARGE
Read
(Auto
Precharge
Disabled)
LL
H
ACTIVE (Select and activate row)
LH
READ (Select column and start new READ burst)
7, 10
LH
L
WRITE (Select column and start WRITE burst)
7, 11
LL
H
L
PRECHARGE
9
Write
(Auto
Precharge
Disabled)
LL
H
ACTIVE (Select and activate row)
LH
READ (Select column and start READ burst)
7, 12
LH
L
WRITE (Select column and start new WRITE burst)
7, 13
LL
H
L
PRECHARGE
9
Read
(With Auto
Precharge)
LL
H
ACTIVE (Select and activate row)
LH
READ (Select column and start new READ burst)
7, 8, 14
LH
L
WRITE (Select column and start WRITE burst)
7, 8, 15
LL
H
L
PRECHARGE
9
Write
(With Auto
Precharge)
LL
H
ACTIVE (Select and activate row)
LH
READ (Select column and start READ burst)
7, 8, 16
LH
L
WRITE (Select column and start new WRITE burst)
7, 8, 17
LL
H
L
PRECHARGE
9
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| MT48H8M16LFF4-10 | 功能描述:IC SDRAM 128MBIT 100MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT48H8M16LFF4-10 IT | 功能描述:IC SDRAM 128MBIT 100MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
| MT48H8M16LFF4-8 | 功能描述:IC SDRAM 128MBIT 125MHZ 54VFBGA RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1 系列:- 格式 - 存儲器:RAM 存儲器類型:SDRAM 存儲容量:256M（8Mx32） 速度:143MHz 接口:并聯(lián) 電源電壓:3 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:托盤 其它名稱:Q2841869 |
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