參數(shù)資料
型號(hào)： MSM548333
廠商： OKI SEMICONDUCTOR CO., LTD.
英文描述： 240,384-Word×8-bit + 240,384-Word×4-bit Triple Port type Field Memory(雙存儲(chǔ)塊分別為240,384字×8位和240,384字×4位三口型場(chǎng)存儲(chǔ)器)
中文描述： 240384 -字× 8位240384 -字× 4位的三場(chǎng)端口類型內(nèi)存（雙存儲(chǔ)塊分別為240384字× 8位和240384字× 4位三口型場(chǎng)存儲(chǔ)器）
文件頁(yè)數(shù)： 12/42頁(yè)
文件大小： 421K
代理商： MSM548333
Semiconductor
MSM548333
12/42
When REC2/RY is high, a set of 4-bit-width serial read data on DOC2/0-3 is read from the
read registers attached to DRAM memory arrays on the rising edge of RCLKC2.
Each access time is specified by the rising edges of RCLK, RCLKY2 and RCLKC2.
2. Read address pointer increment operation
There are three separate pointers for dual port serial read operation. The first one is the read
pointer for Y1 and C1 which is incremented by RCLK when RE1/RY is high. The second one
is the read pointer for Y2 which is incremented by RCLKY2 when REY2/RY is high. The third
one is the read pointer for C2 which incremented by RCLKC2 when REC2/RY is high. When
each read address pointer reaches the last address of a line, it stops at the last address and no
address increment occurs.
Initial Address Setting (Write/Read Independent)
Any read operations are prohibited in the read initial address set period. Similarly, any write
operations are prohibited in the write initial address set period. Note that read initial address set and
write initial address set can occur independently. Similarly, read access can be achieved independently
from write initial address set period and write access can be achieved independently from read initial
address set cycles.
1. Write address setting
During a write, MSM548333 has one write address enable input, WADE/RX. Note that there
are two read address enable inputs for read. WADE/RX enables Y and C initial read address
inputs. When WADE/RX is high, 9 bits of serial X address (or line address) for Y and C and
10 bits of serial Y address (or bit address in the line specified by the X address) for Y and C are
input in parallel from WXAD and WYAD respectively.
The operations above enable selection of specific lines randomly and enables the start of serial
write access synchronized with write clock WCLK. Address for each line must be input
between each line access. In other words, MSM548333's write is achieved in a "line by line"
manner. Any write operations are prohibited in the initial write address set periods.
Y and C Serial write input enable time t
SWE
must be kept for starting a serial write just after
the initial write address set period.
2. Read address setting
During a read, MSM548333 has two read address enable inputs, RADE1/RX and RADE2/RX.
RADE1/RX enables Y1 and C1 initial read address inputs. Similarly, RADE2/RX enables Y2
and C2 initial read address inputs.
When RADE1/RX is high, 9 bits of serial X address (or line address) for Y1 and C1 and 10 bits
of serial Y address (or bit address in the line specified by the X address) for Y1 and C1 are input
in parallel from RXAD1 and RYAD1, respectively. Note that the X and Y address inputs when
RADE1/RX is high are for Y1 and C1.
When RADE2/RX is high, 9 bits of serial X address (or line address) for Y2 and C2 is input from
RXAD2. In the same period, 10 bits of serial Y address (or bit address in the line specified by
the X address) for Y2 is input from RYADY2 pin and another 10 bits of serial Y address (or bit
address in the line specified by the same X address input from RXAD2) for C2 is input from
RYADC2 pin. Note that the X address input here is for both Y2 and C2 and the two sets of Y
address inputs from RYADY2 and RYADC2 are for Y2 and C2, respectively. That is,
MSM548333 can't set separate line addresses in Y2 and C2 but can set separate initial bit
address in Y2 and C2 on the specified lines by the common line address.
The operations above enable selection of specific lines randomly and enables the start of serial
read access synchronized with read clocks, RCLK for Y1 and C1, RCLKY2 for Y2 and RCLKC2
for C2. Address for each line must be input between each line access. In other words,
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