參數(shù)資料
型號(hào)： MSM54V24616
廠商： OKI SEMICONDUCTOR CO., LTD.
英文描述： Dual 128K×16 Dynamic RAM(2組128K×16動(dòng)態(tài)RAM)
中文描述： 128K的雙× 16動(dòng)態(tài)RAM（2 × 16組128K的動(dòng)態(tài)內(nèi)存）
文件頁(yè)數(shù)： 1/32頁(yè)
文件大?。?/td> 437K
代理商： MSM54V24616
1
Semiconductor
MSM54V24616
MSM54V24616
DESCRIPTION
The MSM54V24616 is a 131,072-word
￥
16-bit
￥
2-bank synchronous dynamic RAM, fabricated
in OKI's CMOS silicon gate process technology. The device operates at 3.3 V. The inputs and
outputs are LVTTL compatible. This device can operate up to 125MHz by using synchronous
interface.
FEATURES
131,072-words
￥
16-bit
￥
2 banks configuration
Single 3.3 V
±
10% power supply
LVTTL compatible inputs and outputs
All input signals are latched at rising edge of system clock
Auto precharge and controlled precharge
Internal pipelined operation: column address can be changed every clock cycle
Dual internal banks controlled by A9 (Bank Address: BA)
Independent byte operation via DQML and DQMU
Programmable burst sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable
CAS
latency (1, 2 and 3)
Programmable Write burst (Burst write / Single write)
Burst stop function (full-page burst)
Power Down operation and Active Power Down (Clock Suspend) operation
Auto refresh and Self refresh capability
Refresh period: 1,024 cycles / 16 ms
Package options:
50-pin plastic TSOP (type II) (TSOPII50-P-400-0.80-K) (Product : MSM54V24616-xxTS-K)
xx indicates speed rank.
PRODUCT FAMILY
131,072-Word
￥
16-Bit
￥
2-bank SYNCHRONOUS DYNAMIC RAM
Peimnay
Family
Access Time (Max.)
t
AC1
10 ns
12 ns
15 ns
MSM54V24616-8
MSM54V24616-10
MSM54V24616-12
22 ns
27 ns
32 ns
Max.
Frequency
125 MHz
100 MHz
83MHz
t
AC2
7 ns
9 ns
10 ns
t
AC3
Power Dissipation
Operating (Max.)
648 mW
540 mW
468 mW
Standby (Max.)
7.2 mW
相關(guān)PDF資料
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