參數(shù)資料
型號(hào)： HYB18T256324F-22
廠商： INFINEON TECHNOLOGIES AG
英文描述： 256-Mbit GDDR3 DRAM [600MHz]
中文描述： 256兆GDDR3顯示內(nèi)存[600MHz的]
文件頁數(shù)： 71/80頁
文件大小： 2026K
代理商： HYB18T256324F-22
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Electrical Characteristics
Data Sheet
71
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
4.9
Termination IV Characteristic at 120 Ohms
Figure 56
represents the DQ or ADD/CMD termination Pull-Up IV characteristic under process, voltage and
temperature best and worst case conditions. The actual termination Pull-Up current must lie between these two
bounding curves. The value of the external ZQ resistor is 240
,
setting the nominal termination impedance to
120
. (Extended Mode Register programmed to ZQ/2 for DQ terminations or CKE = 0 at the RES transition during
Power-Up for ADD/CMD terminations).
Figure 56
120 Ohm Active Termination Characteristic
Table 39
lists the numerical values of the minimum and maximum allowed values of the termination IV
characteristic.
Table 39
Voltage(V)
Programmed Terminator Characterisitics at 120 Ohm
Terminator Pull-Up Current
(mA)
Minimum
Maximum
Voltage (V)
Terminator Pull-Up Current
(mA)
Minimum
-6.63
-7.11
-7.57
-8.02
-8.47
-8.91
-9.35
-9.79
-
-
Maximum
-9.06
-9.72
-10.42
-11.00
-11.67
-12.33
-13.05
-13.75
-14.43
-15.08
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
-0.81
-1.60
-2.34
-3.06
-3.74
-4.39
-5.00
-5.58
-6.12
-1.09
-2.14
-3.15
-4.12
-5.06
-5.94
-6.79
-7.59
-8.35
/HM 4ERMINATION #HARACTERSTICS
6$$1 6OUT 6
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