參數(shù)資料
型號(hào): HYB18T256324F-22
廠商: INFINEON TECHNOLOGIES AG
英文描述: 256-Mbit GDDR3 DRAM [600MHz]
中文描述: 256兆GDDR3顯示內(nèi)存[600MHz的]
文件頁(yè)數(shù): 48/80頁(yè)
文件大?。?/td> 2026K
代理商: HYB18T256324F-22
HYB18T256324F–[16/20/22]
256-Mbit DDR SGRAM
Functional Description
Data Sheet
48
Rev. 1.11, 04-2005
10292004-DOXT-FS0U
3.8.2
Read - Basic Sequence
Figure 31
Read Burst
1. Shown with nominal t
AC
and t
DQSQ
2. RDQS will start driving high 1/2 cycle prior to the first falling edge and stop 1/2 cycle after the last rising edge
of RDQS
3. The DQ terminations are switched off 1 cycle before the first Read Data and on again 1 cycle after the last
Read data
#,+
#,+
2$
.$
.$
#OM
.$
.$
.$
.$
.$
"#
!DDR
#!3LATENCY
2$13
$1
#!3LATENCY
2$13
$1
$ONgT#ARE
.$
.$
$
$
$
$
$
$
$
$
"#"ANK#OLUMNADDRESS
$X$ATAFROM"#
#OM#OMMAND
!DDR!DDRESS"#
2$2%!$
.$.OPOR$ESELECT
$1S4ERMINATIONSOFF
2$13.OTDRIVEN
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